Silicon NIP Diode

Rev. V1

MNP0008

1

1

MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

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DC-0014084

1

Features

 Rugged Construction

 C12P Package Style

Description

The MNP0008 is a silicon NIP diode.

Parameter

Test Conditions

Units

Min.

Typ.

Max.

Voltage Breakdown

V

100

—

—

Forward Voltage

mV

—

—

990

Capacitance

pF

—

0.08

0.12

Series Resistance

Ω

—

2.0

2.5

Lifetime

ns

—

150

—

I Layer

—

µm

—

10

—

Parameter

Absolute Maximum

Reverse Voltage

100 V

Operating Temperature

-65°C to +150°C

Storage Temperature

-65°C to +150°C

1. Exceeding any one or combination of these limits may cause

permanent damage to this device.

2. MACOM does not recommend sustained operation near these

survivability limits.

Outline, C12P

Top Contact

(cathode)

Back Contact

Dimensions in mils [mm]