AO4701 datasheet(2/8 Pages) AOSMD

2 / 8 page

AO4701

Symbol

Min

Typ

Max

Units

BVDSS

-30

-1

TJ=55°C

-5

IGSS

±100

VGS(th)

-0.7

-1

-1.3

ID(ON)

-25

42.5

TJ=125°C

Ω

120

Ω

gFS

711

VSD

-0.75

-1

-3

Ciss

952

Coss

103

Crss

5.9

Ω

9.5

Qgs

2nC

Qgd

3.1

tD(on)

4ns

tD(off)

trr

Qrr

SCHOTTKY PARAMETERS

0.45

0.5

0.007

0.05

3.2

Gate resistance

VGS=0V, VDS=0V, f=1MHz

Turn-Off Fall Time

Maximum Body-Diode Continuous Current

Input Capacitance

Output Capacitance

Turn-On DelayTime

DYNAMIC PARAMETERS

IF=-5A, dI/dt=100A/µs

VGS=0V, VDS=-15V, f=1MHz

SWITCHING PARAMETERS

Total Gate Charge

VGS=-4.5V, VDS=-15V, ID=-4A

Gate Source Charge

Gate Drain Charge

Turn-On Rise Time

Turn-Off DelayTime

VGS=-10V, VDS=-15V, RL=3.6Ω,

RGEN=6Ω

Ω

VGS=-4.5V, ID=-4A

IS=-1A,VGS=0V

VDS=-5V, ID=-5A

RDS(ON)

Static Drain-Source On-Resistance

Forward Transconductance

Diode Forward Voltage

IDSS

µA

Gate Threshold Voltage

VDS=VGS ID=-250µA

VDS=-24V, VGS=0V

VDS=0V, VGS=±12V

Zero Gate Voltage Drain Current

Gate-Body leakage current

Electrical Characteristics (TJ=25°C unless otherwise noted)

STATIC PARAMETERS

Parameter

Conditions

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge IF=-5A, dI/dt=100A/µs

Drain-Source Breakdown Voltage

On state drain current

ID=-250µA, VGS=0V

VGS=-2.5V, ID=-1A

VGS=-4.5V, VDS=-5V

VGS=-10V, ID=-5A

Reverse Transfer Capacitance

Forward Voltage Drop

IF=1.0A

Irm

Maximum reverse leakage current

VR=30V

VR=30V, TJ=125°C

VR=30V, TJ=150°C

Junction Capacitance

VR=15V

A: The value of RθJA is measured with the device mounted on 1in

2 FR-4 board with 2oz. Copper, in a still air environment with T

A =25°C. The

value in any a given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance

rating.

B: Repetitive rating, pulse width limited by junction temperature.

C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.

D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80

µs pulses, duty cycle 0.5% max.

E. These tests are performed with the device mounted on 1 in

2 FR-4 board with 2oz. Copper, in a still air environment with T

A=25°C. The

SOA

i l

Alpha & Omega Semiconductor, Ltd.

AO4701 Datasheet(PDF) 2 Page - Alpha & Omega Semiconductors

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