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AO7401 Datasheet(PDF) 2 Page - Alpha & Omega Semiconductors

Part # AO7401
Description  P-Channel Enhancement Mode Field Effect Transistor
PDF  6 Pages
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Manufacturer  AOSMD [Alpha & Omega Semiconductors]
Direct Link  http://www.aosmd.com
Logo AOSMD - Alpha & Omega Semiconductors

AO7401 Datasheet(HTML) 2 Page - Alpha & Omega Semiconductors

  AO7401 Datasheet HTML 1Page - Alpha & Omega Semiconductors AO7401 Datasheet HTML 2Page - Alpha & Omega Semiconductors AO7401 Datasheet HTML 3Page - Alpha & Omega Semiconductors AO7401 Datasheet HTML 4Page - Alpha & Omega Semiconductors AO7401 Datasheet HTML 5Page - Alpha & Omega Semiconductors AO7401 Datasheet HTML 6Page - Alpha & Omega Semiconductors  
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AO7401
Symbol
Min
Typ
Max
Units
BVDSS
-30
V
-1
TJ=55°C
-5
IGSS
±100
nA
VGS(th)
-0.6
-1
-1.4
V
ID(ON)
-10
A
122
150
TJ=125°C
173
220
147
200
m
Ω
207
280
m
Ω
gFS
3
4.5
S
VSD
-0.85
-1
V
IS
-0.5
A
Ciss
409
pF
Coss
55
pF
Crss
42
pF
Rg
12
Ω
Qg
5.06
nC
Qgs
0.72
nC
Qgd
1.58
nC
tD(on)
6.2
ns
tr
3.2
ns
tD(off)
41.2
ns
tf
14.5
ns
trr
13.2
ns
Qrr
5.4
nC
Gate resistance
VGS=0V, VDS=0V, f=1MHz
Turn-Off Fall Time
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Turn-On DelayTime
DYNAMIC PARAMETERS
IF=-1A, dI/dt=100A/µs
VGS=0V, VDS=-15V, f=1MHz
SWITCHING PARAMETERS
Total Gate Charge
VGS=-4.5V, VDS=-15V, ID=-1A
Gate Source Charge
Gate Drain Charge
Turn-On Rise Time
Turn-Off DelayTime
VGS=-10V, VDS=-15V, RL=15Ω,
RGEN=3Ω
m
Ω
VGS=-4.5V, ID=-1.2A
IS=-1A,VGS=0V
VDS=-5V, ID=-1.2A
RDS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
IDSS
µA
Gate Threshold Voltage
VDS=VGS ID=-250µA
VDS=-24V, VGS=0V
VDS=0V, VGS=±12V
Zero Gate Voltage Drain Current
Gate-Body leakage current
Electrical Characteristics (TJ=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter
Conditions
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=-1A, dI/dt=100A/µs
Drain-Source Breakdown Voltage
On state drain current
ID=-250µA, VGS=0V
VGS=-2.5V, ID=-1A
VGS=-4.5V, VDS=-5V
VGS=-10V, ID=-1.2A
Reverse Transfer Capacitance
A: The value of RθJA is measured with the device mounted on 1in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A =25°C. The
value in any a given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80
µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A=25°C. The
SOA curve provides a single pulse rating.
Alpha & Omega Semiconductor, Ltd.



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