GaAs Schottky Diode

Rev. V1

SMGS11

1

1

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DC-0014105

1

Features

 Small Footprint, only 50 x 30 mils.

 Very Low Parasitic Package Inductance, Series

Resistance, and Low Package Capacitance

 RoHS* Compliant

Description

The SMGS11 is a GaAs Schottky diode in a molded

plastic DFN package. It is designed for broadband

detector and single diode mixer. It is in single

configuration. It has a high cutoff frequency and can

be used beyond 26.5 GHz.

* Restrictions on Hazardous Substances, European Union Directive 2011/65/EU.

Parameter

Test Conditions

Units

Min.

Typ.

Max.

V

620

—

760

V = 0 V, >4 GHz

pF

—

0.10

0.08

0.13

0.10

Ω

—

—

7

Ω

—

1250

—

NF -3 dB, 10 GHz

dBm

—

-57

—

Voltage Sensitivity (y)

—

8000

—

Absolute Maximum Ratings

Parameter

Absolute Maximum

Input Power

20 dBm

Reverse Voltage

5 V

Forward Current

20 mA

Junction Temperature

+175°C

Storage Temperature

-65°C to +150°C

Solder Temperature

+260°C, peak for 5 sec,

per JEDEC J-STD-20C

Case 0503 - Molded Plastic DFN Package

Handling Procedures

Please observe the following precautions to avoid

damage:

Static Sensitivity

These

electronic

devices

are

sensitive

to

electrostatic discharge (ESD) and can be damaged

by static electricity. Proper ESD control techniques

should be used when handling these (HBM) Class 0

devices.