Silicon Hyperabrupt Junction Varactor Diode

Rev. V1

1

1

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K3313

Features

 Compact 1.27 x 1.7 x 0.09 mm SMT Package

 Uniform Capacitance / Temperature Coefficient

 Available on Tape and Reel

Description

The K3313 silicon hyperabrupt junction varactor

diode is designed for use in voltage controlled

oscillators (VCO’s) with low tuning voltage operation.

Parameter

Test Conditions

Units

Min.

Typ.

Max.

Voltage Breakdown

V

12.0

—

—

Forward Voltage

V

—

—

1.0

Total Capacitance

pF

20.0

8.5

4.0

—

22.0

8.5

4.6

Parameter

Absolute Maximum

Breakdown Voltage

12 Min. @ -10 µA

Moisture Sensitivity Level

1

Operating Temperature

-55°C to +125°C

Storage Temperature

-65°C to +200°C

1. Exceeding any one or combination of these limits may cause

permanent damage to this device.

2. MACOM does not recommend sustained operation near these

survivability limits.

Outline Drawing, SOD-323

Handling Procedures

Please observe the following precautions to avoid

damage:

Static Sensitivity

These electronic devices are sensitive to electrostatic

discharge (ESD) and can be damaged by static electricity.

Proper ESD control techniques should be used when handling

these

Class 0 (HBM) devices.