Planar Back (Tunnel) Diodes

Rev. V2

MBDxx57-x Series

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Back Diode Parameters

Diode Equivalent Circuit

10 GHz RF Detector Test Circuit

The germanium planar back (tunnel) diode is sensitive to mechanical pressure and high temperatures.

Die attach: Conductive epoxy only with maximum curing temperature of +125°C

Wire Bond: 0.7 mil gold wire and thermo-compression wedge bond within the following:

Stage Temperature: +155°C maximum for 20 seconds max

Tip Temperature: +160°C maximum

Bonding Pressure: 20 grams maximum

Bonding is performed on the larger diameter offset bonding pad (see figure 1) and not over the junction.

Die Assembly