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IRF7493 Datasheet(PDF) 2 Page - International Rectifier |
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IRF7493 Datasheet(HTML) 2 Page - International Rectifier |
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2 / 9 page  IRF7493 2 www.irf.com Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units BVDSS Drain-to-Source Breakdown Voltage 80 ––– ––– V ∆ΒV DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.074 ––– mV/°C RDS(on) Static Drain-to-Source On-Resistance ––– 11.5 15 m Ω VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V IDSS Drain-to-Source Leakage Current ––– ––– 20 µA ––– ––– 250 IGSS Gate-to-Source Forward Leakage ––– ––– 200 nA Gate-to-Source Reverse Leakage ––– ––– -200 Dynamic @ TJ = 25°C (unless otherwise specified) gfs Forward Transconductance 13 ––– ––– S Qg Total Gate Charge ––– 35 53 Qgs Gate-to-Source Charge ––– 5.7 ––– Qgd Gate-to-Drain Charge ––– 12 ––– td(on) Turn-On Delay Time ––– 8.3 ––– tr Rise Time ––– 7.5 ––– td(off) Turn-Off Delay Time ––– 30 ––– ns tf Fall Time ––– 12 ––– Ciss Input Capacitance ––– 1510 ––– Coss Output Capacitance ––– 320 ––– pF Crss Reverse Transfer Capacitance ––– 130 ––– Coss Output Capacitance ––– 1130 ––– Coss Output Capacitance ––– 210 ––– Crss eff. Effective Output Capacitance ––– 320 ––– Avalanche Characteristics Parameter Units EAS Single Pulse Avalanche Energy d mJ IAR Avalanche Current à A Diode Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current ––– ––– 9.3 (Body Diode) A ISM Pulsed Source Current ––– ––– 74 (Body Diode) à VSD Diode Forward Voltage ––– ––– 1.3 V trr Reverse Recovery Time ––– 37 56 ns Qrr Reverse Recovery Charge ––– 52 78 nC RG = 6.2Ω Conditions VGS = 10V Max. 180 5.6 VGS = 0V, VDS = 0V to 64V g Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 1mA VGS = 10V, ID = 5.6A e TJ = 25°C, IF = 5.6A, VDD = 15V di/dt = 100A/µs e TJ = 25°C, IS = 5.6A, VGS = 0V e showing the integral reverse p-n junction diode. Typ. ––– ––– VGS = 10V VGS = 0V VDS = 25V VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz VGS = 0V, VDS = 64V, ƒ = 1.0MHz VDD = 40V, e ID = 5.6A MOSFET symbol VDS = VGS, ID = 250µA VDS = 80V, VGS = 0V VDS = 64V, VGS = 0V, TJ = 125°C ƒ = 1.0MHz VDS = 15V, ID = 5.6A VDS = 40V VGS = 20V VGS = -20V ID = 5.6A |
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