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IRHM7130 Datasheet(PDF) 1 Page - International Rectifier |
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IRHM7130 Datasheet(HTML) 1 Page - International Rectifier |
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1 / 12 page  Absolute Maximum Ratings Absolute Maximum Ratings Absolute Maximum Ratings Absolute Maximum Ratings Absolute Maximum Ratings Parameter Parameter Parameter Parameter Parameter Units Units Units Units Units ID @ VGS = 12V, TC = 25°C Continuous Drain Current 14 ID @ VGS = 12V, TC = 100°C Continuous Drain Current 9.0 IDM Pulsed Drain Current ➀ 56 PD @ TC = 25°C Max. Power Dissipation 75 W Linear Derating Factor 0.60 W/°C VGS Gate-to-Source Voltage ±20 V EAS Single Pulse Avalanche Energy ➁ 160 mJ IAR Avalanche Current ➀ 14 A EAR Repetitive Avalanche Energy ➀ 7.5 mJ dv/dt Peak Diode Recovery dv/dt ➂ 5.5 V/ns TJ Operating Junction -55 to 150 TSTG Storage Temperature Range Lead Temperature 300 ( 0.063 in.(1.6mm) from case for 10s) Weight 9.3(Typical ) g Pre-Irradiation Pre-Irradiation Pre-Irradiation Pre-Irradiation Pre-Irradiation International Rectifiers RADHard HEXFET® technol- ogy provides high performance power MOSFETs for space applications. This technology has over a de- cade of proven performance and reliability in satellite applications. These devices have been character- ized for both Total Dose and Single Event Effects (SEE). The combination of low Rdson and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of elec- trical parameters. oC A RADIATION HARDENED RADIATION HARDENED RADIATION HARDENED RADIATION HARDENED RADIATION HARDENED POWER MOSFET POWER MOSFET POWER MOSFET POWER MOSFET POWER MOSFET THRU-HOLE THRU-HOLE THRU-HOLE THRU-HOLE THRU-HOLE (T0-254AA) (T0-254AA) (T0-254AA) (T0-254AA) (T0-254AA) 7/5/01 www.irf.com 1 Product Summary Product Summary Product Summary Product Summary Product Summary Part Number Radiation Level Part Number Radiation Level Part Number Radiation Level Part Number Radiation Level Part Number Radiation Level R R R R RDS(on) DS(on) DS(on) DS(on) DS(on) IIIII DDDDD IRHM7130 100K Rads (Si) 0.18Ω 14A IRHM3130 300K Rads (Si) 0.18Ω 14A IRHM4130 600K Rads (Si) 0.18Ω 14A IRHM8130 1000K Rads (Si) 0.18Ω 14A For footnotes refer to the last page IRHM7130 IRHM7130 IRHM7130 IRHM7130 IRHM7130 100V, N-CHANNEL 100V, N-CHANNEL 100V, N-CHANNEL 100V, N-CHANNEL 100V, N-CHANNEL RAD Hard RAD Hard RAD Hard RAD Hard RAD Hard HEXFET HEXFET HEXFET HEXFET HEXFET ® TECHNOLOGY TECHNOLOGY TECHNOLOGY TECHNOLOGY TECHNOLOGY TO-254AA TO-254AA TO-254AA TO-254AA TO-254AA Features: Features: Features: Features: Features: ! Single Event Effect (SEE) Hardened ! Low RDS(on) ! Low Total Gate Charge ! Proton Tolerant ! Simple Drive Requirements ! Ease of Paralleling ! Hermetically Sealed ! Ceramic Package ! Light Weight PD - 90707D |
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Similar Description - IRHM7130 |
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