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LM4870 Datasheet(PDF) 7 Page - National Semiconductor (TI) |
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LM4870 Datasheet(HTML) 7 Page - National Semiconductor (TI) |
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7 / 8 page ![]() Application Information (Continued) are required for 1.0W of output power. Since 5V rails are common, it is chosen to be the supply voltage. Supply volt- age (up to a maximum of 5.5V) above the required 4.6V will allow the LM4870 to reproduce transient signals at greater than 1.0W of output power. The extra voltage will also in- crease the device power dissipation, so the designer must make sure that the conditions explained in the Power Dissi- pationsection are not violated. Once the power dissipation issues have been addressed, the required differential gain can be determined from Equa- tion 4: From equation 4, the minimum A vd is A vd = 2.83; use Avd= 3. Since the amplifier output is bridged, giving a gain of 2, and the desired system gain is 3, the ratio of feedback (R f)toin- put (R i) resistor is 1.5:1. If Ri is set to the required input im- pedance of 20 k Ω, then R f = 30 kΩ. The final design step is to address the bandwidth requirements which must be stated as a pair of −3 dB frequency points. Five times away from a −3 dB point is 0.17 dB down from passband response which is better than the required ±0.25 dB specified. f L = 100 Hz/5 = 20 Hz f H = 20 kHz5 = 100 HzAs stated in the External Compo- nents section, R i in conjunction with Ci create a highpass filter. C i ≥ 1/(2π * 20 kΩ * 20 Hz) = 0.397 µF; use 0.39 µF. The high frequency pole is determined by the product of the desired high frequency pole, f H, and the differential gain, A vd . With a A vd = 3 and fH = 100 kHz, the resulting GBWP = 150 kHz which is much smaller than the LM4870 GBWP of 4 MHz. This figure displays that if a designer has a need to design an amplifier with a higher differential gain, the LM4870 can still be used without running into bandwidth problems. www.national.com 7 |
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