September 1988

2

Philips Semiconductors

Product specification

UHF power transistor

BLV91/SL

DESCRIPTION

NPN silicon planar epitaxial transistor designed for use in

mobile radio transmitters in the 900 MHz band.

FEATURES

• diffused emitter-ballasting resistors for an optimum

temperature profile.

• gold metallization ensures excellent reliability.

• the device can be applied at rated load power, without

an external heatsink, when it is mounted on a

printed-circuit board (see Fig.6).

The transistor has a 4-lead envelope with a ceramic cap

(SOT-172D). All leads are isolated from the mounting

base.

QUICK REFERENCE DATA

RF performance in a common-emitter class-B circuit

Note

1. Device mounted on a printed-circuit board (see Fig.6).

MODE OF OPERATION

T

°C

V

f

MHz

W

dB

%

narrow band; CW

12.5

900

2

> 6.5

> 50

12.5

900

1.5

> 6.5

> 50

9.6

900

1.5

typ. 6.6

typ. 60

PIN CONFIGURATION

Fig.1 Simplified outline. SOT172D.

handbook, halfpage

2

1

4

3

MSB007

Top view

PINNING - SOT172D.

PIN

DESCRIPTION

1

emitter

2

base

3

collector

4

emitter

PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely safe

provided that the BeO disc is not damaged.