1

Publication Order Number :

2SC5994/D

www.onsemi.com

©

Semiconductor Components Industries, LLC, 2016

April 2016 - Rev. 2

2SC5994

Bipolar Transistor

50V, 2A, Low VCE(sat), NPN Single

Features

• Adoption of MBIT Process

• Low Collector to Emitter Saturation Voltage

• Large Current Capacity

• High Speed Switching

Typical Applications

• Voltage Regulators

• Relay Drivers

• Lamp Drivers

• Electrical Equipment

SPECIFICATIONS

ABSOLUTE MAXIMUM RATING

at Ta = 25

Parameter

Symbol

Value

Unit

Collector to Base Voltage

VCBO

100

V

Collector to Emitter Voltage

VCES

100

V

VCEO

50

V

Emitter to Base Voltage

VEBO

6V

Collector Current

IC

2A

Collector Current (Pulse)

ICP

4A

Base Current

IB

400

mA

Collector Dissipation

(Note 2)

PC

1.3

W

Tc=25

°C

3.5

W

Junction Temperature

Tj

150

°C

Storage Temperature

Tstg

−55 to +150

°C

Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage

the device. If any of these limits are exceeded, device functionality should not

be assumed, damage may occur and reliability may be affected.

Note 2 : Surface mounted on ceramic substrate(450mm

ELECTRICAL CONNECTION

ORDERING INFORMATION

See detailed ordering and shipping

information on page 5 of this data sheet.

MARKING

2

3

1

1: Base

2 : Collector

3: Emitter

1

2

3

SOT-89 / PCP-1

1

2

3