DTA044TM datasheet(2/9 Pages) ROHM

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DTA044T series

Datasheet

lAbsolute maximum ratings (Ta = 25°C)

Parameter

Symbol

Values

Unit

Collector-base voltage

VCBO

-50

Collector-emitter voltage

VCEO

-50

Emitter-base voltage

VEBO

-5

Collector current

IC*1

-60

Power dissipation

DTA044TM

PD*2

150

DTA044TEB

150

DTA044TUB

200

Junction temperature

150

℃

Range of storage temperature

Tstg

-55 to +150

℃

lElectrical characteristics (Ta = 25°C)

Parameter

Symbol

Conditions

Values

Unit

Min.

Typ.

Max.

Collector-base breakdown

voltage

BVCBO

IC = -50μA

-50

Collector-emitter breakdown

voltage

BVCEO

IC = -1mA

-50

Emitter-base breakdown voltage

BVEBO

IE = -50μA

-5

Collector cut-off current

ICBO

VCB = -50V

-500

Emitter cut-off current

IEBO

VEB = -4V

-500

Collector-emitter saturation voltage

VCE(sat)

IC = -5mA, IB = -0.5mA

-70

-150

DC current gain

hFE

VCE = -10V, IC = -5mA

100

600

Input resistance

32.9

61.1

kΩ

Transition frequency

fT*1

VCE = -10V, IE = 5mA,

f = 100MHz

250

MHz

*1 Characteristics of built-in transistor

*2 Each terminal mounted on a reference land.

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20160408 - Rev.003

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