MSA1110 datasheet(2/4 Pages) HP

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MSA-1110 Absolute Maximum Ratings

Parameter

Absolute Maximum[1]

Device Current

90 mA

Power Dissipation[2,3]

560 mW

RF Input Power

+13 dBm

Junction Temperature

200

°C

Storage Temperature

–65 to 200

°C

Thermal Resistance[2,4]:

jc = 135°C/W

Notes:

1. Permanent damage may occur if any of these limits are exceeded.

2. TCASE = 25°C.

3. Derate at 7.4 mW/

°C for T

C > 124°C.

4. The small spot size of this technique results in a higher, though more

accurate determination of

jc than do alternate methods. See MEASURE-

MENTS section “Thermal Resistance” for more information.

Power Gain (|S21| 2)

f = 0.1 GHz

11.5

12.5

13.5

∆GP

Gain Flatness

f = 0.1 to 1.0 GHz

±0.7

±1.0

f3 dB

3 dB Bandwidth[2]

GHz

1.6

Input VSWR

f = 0.1 to 1.0 GHz

1.7:1

Output VSWR

f = 0.1 to 1.0 GHz

1.9:1

Ω Noise Figure

f = 0.5 GHz

3.5

4.5

P1 dB

Output Power at 1 dB Gain Compression

f = 0.5 GHz

dBm

16.0

17.5

IP3

Third Order Intercept Point

f = 0.5 GHz

dBm

30.0

Group Delay

f = 0.5 GHz

psec

160

Device Voltage

4.5

5.5

6.5

dV/dT

Device Voltage Temperature Coefficient

mV/

°C

–8.0

Notes:

1. The recommended operating current range for this device is 40 to 75 mA. Typical performance as a function of current

is on the following page.

2. Referenced from 50 MHz gain (GP).

Electrical Specifications[1], TA = 25°C

Symbol

Parameters and Test Conditions: I

d = 60 mA, ZO = 50 Ω

Units

Min.

Typ.

Max.

VSWR

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