IRL3103L datasheet(2/10 Pages) IRF

2 / 10 page

IRL3303S/L

Parameter

Min. Typ. Max. Units

Conditions

V(BR)DSS

Drain-to-Source Breakdown Voltage

–––

VGS = 0V, ID = 250µA

∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient

–––

0.035 –––

V/°C

Reference to 25°C, ID = 1mA

–––

––– 0.026

VGS = 10V, ID = 20A

–––

––– 0.040

Ω

VGS = 4.5V, ID = 17A

TJ = 150°C

VGS(th)

Gate Threshold Voltage

1.0

–––

VDS = VGS, ID = 250µA

gfs

Forward Transconductance

–––

VDS = 25V, ID = 20A

–––

µA

VDS = 30V, VGS = 0V

–––

250

VDS = 24V, VGS = 0V, TJ = 150°C

Gate-to-Source Forward Leakage

–––

100

VGS = 16V

Gate-to-Source Reverse Leakage

–––

-100

VGS = -16V

Total Gate Charge

–––

ID = 20A

Qgs

Gate-to-Source Charge

–––

8.8

VDS = 24V

Qgd

Gate-to-Drain ("Miller") Charge

–––

VGS = 4.5V, See Fig. 6 and 13

td(on)

Turn-On Delay Time

–––

7.4

–––

VDD = 15V

Rise Time

–––

200

–––

ID = 20A

td(off)

Turn-Off Delay Time

–––

RG = 6.5

Ω

Fall Time

–––

RD = 0.7

Ω, See Fig. 10

Between lead,

–––

and center of die contact

Ciss

Input Capacitance

–––

870

–––

VGS = 0V

Coss

Output Capacitance

–––

340

–––

VDS = 25V

Crss

Reverse Transfer Capacitance

–––

170

–––

ƒ = 1.0MHz, See Fig. 5

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

RDS(on)

Static Drain-to-Source On-Resistance

IGSS

IDSS

Drain-to-Source Leakage Current

Internal Source Inductance

7.5

Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 11 )

SD ≤ 20A, di/dt ≤ 140A/µs, VDD ≤ V(BR)DSS,

TJ ≤ 175°C

Notes:

DD = 15V, starting TJ = 25°C, L = 470µH

RG = 25Ω, IAS = 20A. (See Figure 12)

Pulse width ≤ 300µs; duty cycle ≤ 2%.

** When mounted on 1" square PCB ( FR-4 or G-10 Material ).

For recommended footprint and soldering techniques refer to application note #AN-994.

Uses IRL3303 data and test conditions.

Source-Drain Ratings and Characteristics

Parameter

Min. Typ. Max. Units

Conditions

Continuous Source Current

MOSFET symbol

(Body Diode)

–––

showing the

ISM

Pulsed Source Current

integral reverse

(Body Diode)

–––

p-n junction diode.

VSD

Diode Forward Voltage

–––

1.3

TJ = 25°C, IS = 20A, VGS = 0V

trr

Reverse Recovery Time

–––

110

TJ = 25°C, IF = 20A

Qrr

Reverse Recovery Charge

–––

180

280

µC

di/dt = 100A/µs

ton

Forward Turn-On Time

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

140

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