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P12C508 Datasheet(PDF) 54 Page - Microchip Technology |
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P12C508 Datasheet(HTML) 54 Page - Microchip Technology |
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54 / 84 page ![]() PIC12C5XX DS40139A-page 54 Advance Information © 1996 Microchip Technology Inc. 10.1 DC CHARACTERISTICS: PIC12508/509 (Commercial) PIC12508/509 (Industrial) DC Characteristics Power Supply Pins Standard Operating Conditions (unless otherwise specified) Operating Temperature 0 °C ≤ TA ≤ +70°C (commercial) –40 °C ≤ TA ≤ +85°C (industrial) Characteristic Sym Min Typ(1) Max Units Conditions Supply Voltage VDD 2.5 5.5 V FOSC = DC to 4 MHz RAM Data Retention Voltage(2) VDR 1.5* V Device in SLEEP mode VDD Start Voltage to ensure Power-on Reset VPOR VSS V See section on Power-on Reset for details VDD Rise Rate to ensure Power-on Reset SVDD 0.05* V/ms See section on Power-on Reset for details Supply Current(3) IDD — — — — 1.8 1.8 15 19 2.4 2.4 27 35 mA mA µA µA XT and EXTRC options (Note 4) FOSC = 4 MHz, VDD = 5.5 V INTRC Option FOSC = 4 MHz, VDD = 5.5 V LP OPTION, Commercial Temperature FOSC = 32 kHz, VDD = 3.0 V, WDT disabled LP OPTION, Industrial Temperature FOSC = 32 kHz, VDD = 3.0 V, WDT disabled Power-Down Current (5) WDT Enabled WDT Disabled IPD — — — — 4 5 0.25 0.3 12 14 4 5 µA µA µA µA VDD = 3.0 V, Commercial VDD = 3.0 V, Industrial VDD = 3.0 V, Commercial VDD = 3.0 V, Industrial * These parameters are characterized but not tested. Note 1: Data in the Typical (“Typ”) column is based on characterization results at 25 °C. This data is for design guid- ance only and is not tested. 2: This is the limit to which VDD can be lowered in SLEEP mode without losing RAM data. 3: The supply current is mainly a function of the operating voltage and frequency. Other factors such as bus loading, oscillator type, bus rate, internal code execution pattern, and temperature also have an impact on the current consumption. a) The test conditions for all IDD measurements in active operation mode are: OSC1 = external square wave, from rail-to-rail; all I/O pins tristated, pulled to Vss, T0CKI = VDD, MCLR = VDD; WDT enabled/disabled as specified. b) For standby current measurements, the conditions are the same, except that the device is in SLEEP mode. 4: Does not include current through Rext. The current through the resistor can be estimated by the formula: IR = VDD/2Rext (mA) with Rext in kOhm. 5: The power down current in SLEEP mode does not depend on the oscillator type. Power down current is mea- sured with the part in SLEEP mode, with all I/O pins in hi-impedance state and tied to VDD or VSS. |
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