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SLD432S Datasheet(PDF) 2 Page - List of Unclassifed Manufacturers |
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SLD432S Datasheet(HTML) 2 Page - List of Unclassifed Manufacturers |
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2 / 2 page ![]() 0 0 If [A] Light-current Far field pattern Spectrum 20 30 40 10 50 15 30 45 60 Angle [deg.] –40 –20 20 40 0 790 800 820 830 810 Wavelength [nm] 0.2 0.0 0.4 0.6 0.8 1.0 0.2 0.0 0.4 0.6 0.8 1.0 θ// θ⊥ CW drive Tc = 25 °C CW drive Tc = 25 °C Po = 40 W CW drive Tc = 25 °C Po = 40 W GaAs substrate Active layer N-side electrode P-side electrode Laser beam emitting point 100 µm 10 ±0.2 3-cross-recessed head 2- φ3.2 Machine screws (M2) LD (–) LD chip LD (+) 4.7 ±0.1 6 7 8 9 (10.3) 5.5 17.8 15 24.9 ±0.2 φ2 depth4 M3 (Unit: mm) Threshold current Item Operating current Operating voltage Oscillation wavelength Radiation angle Parallel to junction Perpendicular to junction Differential efficiency Symbol Ith Iop Vop λp θ// θ⊥ ηD Typical value Unit Conditions: TC = 25 °C Po =40 W@CW 13 50 1.9 808 8 24 1.2 A V nm deg. W/A s Table 1 SLD432S Main Characteristics s Figure 3 SLD432S Package Dimensions s Figure 2 SLD432S Chip Structure s Figure 1 SLD432S Representative Characteristics |
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