BD809 datasheet(2/4 Pages) ONSEMI

2 / 4 page

BD809 (NPN), BD810 (PNP)

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ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

Collector−Emitter Sustaining Voltage (Note 1)

(IC = 0.1 Adc, IB = 0)

BVCEO

−

Vdc

Collector Cutoff Current

(VCB = 80 Vdc, IE = 0)

ICBO

−

1.0

mAdc

Emitter Cutoff Current

(VBE = 5.0 Vdc, IC = 0)

IEBO

−

2.0

mAdc

DC Current Gain

(IC = 2.0 A, VCE = 2.0 V)

(IC = 4.0 A, VCE = 2.0 V)

hFE

−

Collector−Emitter Saturation Voltage (Note 1)

(IC = 3.0 Adc, IB = 0.3 Adc)

VCE(sat)

−

1.1

Vdc

Base−Emitter On Voltage (Note 1)

(IC = 4.0 Adc, VCE = 2.0 Vdc)

VBE(on)

−

1.6

Vdc

Current−Gain Bandwidth Product

(IC = 1.0 Adc, VCE = 10 Vdc, f = 1.0 MHz)

1.5

−

MHz

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

1. Pulse Test: Pulse Width

≤ 300 ms, Duty Cycle ≤ 2.0%.

Figure 1. Active Region DC Safe Operating Area

(see Note on page 3)

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

0.1

100

0.3

5 ms

1 ms

.5 ms

1 ms

100

125

150

175

Figure 2. Power−Temperature Derating Curve

TC, CASE TEMPERATURE (°C)

500

IC, COLLECTOR CURRENT (AMP)

0.5

0.2

1.0

2.0

100

TJ = 150°C

°C

-55

°C

200

BD809 (NPN)

BD810 (PNP)

IC, COLLECTOR CURRENT (AMP)

TJ = 150°C

°C

-55

°C

5.0

VCE = 2.0 V

5.0

0.5

0.2

1.0

2.0

5.0

500

100

200

5.0

Figure 3. DC Current Gain

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