2n4401 datasheet(1/1 Pages) TEL

Part #	2N4401

Description	TO-92 Plastic-Encapsulated Transistors

PDF	1 Pages

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Manufacturer	TEL [TRANSYS Electronics Limited]

Direct Link	http://www.transyselectronics.com

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TO-92 Plastic-Encapsulated Transistors

2N4401

TRANSISTOR (NPN)

FEATURES

Power dissipation

PCM :

0.625 W (Tamb=25

℃)

Collector current

ICM :

0.6

A

Collector-base voltage

V(BR)CBO : 60

V

Operating and storage junction temperature range

TJ, Tstg: -55

℃ to +150℃

ELECTRICAL

CHARACTERISTICS ( Tamb=25

℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

MAX

UNIT

Collector-base breakdown voltage

V(BR)CBO

Ic=100

µA , I

E=0

60

V

Collector-emitter breakdown voltage

V(BR)CEO

IC= 1mA ,

IB=0

40

V

Emitter-base breakdown voltage

V(BR)EBO

IE=100µA,

IC=0

6

V

Collector cut-off current

ICBO

VCB=50 V , IE=0

0.1

µA

Collector cut-off current

ICEO

VCE=35 V , IB=0

0.1

µA

Emitter cut-off current

IEBO

VEB=5V ,

IC=0

0.1

µA

DC current gain

hFE 1

VCE=1 V, IC= 150mA

100

300

Collector-emitter saturation voltage

VCE(sat)

IC=150 mA, IB=15mA

0.4

V

Base-emitter saturation voltage

VBE(sat)

IC= 150 mA, IB=15mA

0.95

V

Transition frequency

f T

VCE= 10V, IC= 20mA

f = 100MHz

250

MHz

1 2 3

TO-92

1.EMILTTER

2.BASE

3. COLLECTOR

Transys

Electronics

LI M ITE D

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