BUV21 datasheet(1/4 Pages) ONSEMI

Part #	BUV21

Description	SWITCHMODE Series NPN Silicon Power Transistor

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Manufacturer	ONSEMI [ON Semiconductor]

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December, 2013 − Rev. 11

1

Publication Order Number:

BUV21/D

BUV21

SWITCHMODEt Series

NPN Silicon Power

Transistor

This device is designed for high speed, high current, high power

applications.

Features

• High DC Current Gain:

hFE min = 20 at IC = 12 A

• Low VCE(sat), VCE(sat)

max = 0.6 V at IC = 8 A

• Very Fast Switching Times:

TF max = 0.4

ms at IC = 25 A

• These are Pb−Free Devices*

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector−Emitter Voltage

VCEO(SUS)

200

Vdc

Collector−Base Voltage

VCBO

250

Vdc

Emitter−Base Voltage

VEBO

7

Vdc

Collector−Emitter Voltage (VBE = −1.5 V)

VCEX

250

Vdc

Collector−Emitter Voltage (RBE = 100 W)

VCER

240

Vdc

Collector−Current − Continuous

− Peak (PW v 10 ms)

IC

ICM

40

50

Adc

Apk

Base−Current Continuous

IB

8

Adc

Total Device Dissipation @ TC = 25_C

PD

250

W

Operating and Storage Junction

Temperature Range

TJ, Tstg

−65 to 200

_C

THERMAL CHARACTERISTICS

Characteristics

Symbol

Max

Unit

Thermal Resistance, Junction−to−Case

qJC

0.7

_C/W

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

40 AMPERES

NPN SILICON POWER

METAL TRANSISTOR

200 VOLTS − 250 WATTS

http://onsemi.com

MARKING

DIAGRAM

Device

Package

Shipping

ORDERING INFORMATION

BUV21G

TO−204

(Pb−Free)

100 Units / Tray

BUV21G

AYWW

MEX

TO−204AE (TO−3)

CASE 197A

STYLE 1

BUV21 = Device Code

G

= Pb−Free Package

A

= Assembly Location

Y

= Year

WW

= Work Week

MEX

= Country of Origin

BASE

1

EMITTER 2

COLLECTOR

CASE

NPN

1

2

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