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9

9 - 26

General Description

Features

The

HMC313

&

HMC313E

are

GaAs

InGaP

Heterojunction

Bipolar

Transistor

(HBT)

MMIC

amplifiers that operate from a single Vcc supply.

The surface mount SOT26 amplifier can be used

as a broadband gain stage or used with external

matching for optimized narrow band applications.

With Vcc biased at +5V, the HMC313(E) offers 17 dB

of gain and +15 dBm of saturated power while only

requiring 50 mA of current.

P1dB Output Power: +14 dBm

Output IP3: +27 dBm

Gain: 17 dB

Single Supply: +5V

High Reliability GaAs HBT Process

Ultra Small Package: SOT26

Included in the HMC-DK001 Designer’s Kit

Ideal as a Driver & Amplifier for:

• 2.2 - 2.7 GHz MMDS

• 3.5 GHz Wireless Local Loop

• 5 - 6 GHz UNII & HiperLAN

Parameter

Vcc = +5V

Units

Min.

Typ.

Max.

Frequency Range

DC - 6

GHz

Gain

14

17

20

dB

Gain Variation Over Temperature

0.02

0.03

dB/°C

Input Return Loss

7dB

Output Return Loss

6dB

Reverse Isolation

30

dB

Output Power for 1 dB Compression (P1dB) @ 1.0 GHz

11

14

dBm

Saturated Output Power (Psat) @ 1.0 GHz

15

dBm

Output Third Order Intercept (IP3) @ 1.0 GHz

24

27

dBm

Noise Figure

6.5

dB

Supply Current (Icc)

50

mA

Note: Data taken with broadband bias tee on device output.

Functional Diagram

Typical Applications

GaAs InGaP HBT MMIC BROADBAND

AMPLIFIER GAIN BLOCK, DC - 6 GHz

v06.0109

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