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PSMN009 Datasheet(PDF) 6 Page - NXP Semiconductors

Part # PSMN009
Description  N-channel TrenchMOS횚 transistor
PDF  8 Pages
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

PSMN009 Datasheet(HTML) 6 Page - NXP Semiconductors

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Philips Semiconductors
Product specification
N-channel TrenchMOS
™ transistor
PSMN009-100W
Fig.13. Typical turn-on gate-charge characteristics
V
GS = f(QG)
Fig.14. Typical reverse diode current.
I
F = f(VSDS); conditions: VGS = 0 V; parameter Tj
Fig.15. Maximum permissible non-repetitive
avalanche current (I
AS) versus avalanche time (tAV);
unclamped inductive load
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
0
20
40
60
80
100 120 140 160 180 200 220 240
Gate charge, QG (nC)
Gate-source voltage, VGS (V)
ID = 100A
Tj = 25 C
VDD = 20 V
VDD = 80 V
1
10
100
1000
0.001
0.01
0.1
1
10
Avalanche time, tAV (ms)
Maximum Avalanche Current, IAS (A)
Tj prior to avalanche = 150 C
25 C
0
10
20
30
40
50
60
70
80
90
100
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
1
1.1 1.2 1.3 1.4 1.5
Source-Drain Voltage, VSDS (V)
Source-Drain Diode Current, IF (A)
Tj = 25 C
175 C
VGS = 0 V
October 1999
6
Rev 1.100



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