| Electronic Components Datasheet Search |
|
KV2801 Datasheet(PDF) 1 Page - Advanced Semiconductor |
|
|
|||||||||||||||||||||||||||||
KV2801 Datasheet(HTML) 1 Page - Advanced Semiconductor |
|
|
1 / 1 page ![]() A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004 1/1 Specifications are subject to change without notice. CHARACTERISTICS TA = 25 °C NONE SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS VR IR = 10 µA 22 V IR VR = 20 V 100 µµµµA CT3 VR = 3.0 V f = 1.0 MHz 25 28 31 pF CT8 VR = 8.0 V f = 1.0 MHz 10 12 13.5 pF CT20 VR = 20 V f = 1.0 MHz 4.5 4.8 5.1 pF ∆∆∆∆C T VR = 3 to 20 V f = 1.0 MHz 5.2 5.7 6.1 RATIO Q VR = 3.0V f = 50 MHz 200 250 SILICON HYPERABRUPT TUNING VARACTOR KV2801 DESCRIPTION: The ASI KV2801 is a Silicon Hyperabrupt Tuning Varactor Diode Designed for UHF Applications up to 800 MHz.The Cathode is Indicated by a Color Band. MAXIMUM RATINGS IF 40 mA VR 22 V PDISS 200 mW @ TA = 25 °C TJ -55 °C to +175 °C TSTG -55 °C to +175 °C PACKAGE STYLE DO-7 |
Similar Part No. - KV2801 |
|
Similar Description - KV2801 |
|
|
Link URL |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link to Datasheet | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |