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EMD3 Datasheet(PDF) 2 Page - Rohm

Part # EMD3
Description  General purpose (dual digital transistor)
PDF  13 Pages
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Manufacturer  ROHM [Rohm]
Direct Link  http://www.rohm.com
Logo ROHM - Rohm

EMD3 Datasheet(HTML) 2 Page - Rohm

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EMD3 / UMD3N / IMD3A
Datasheet
l
lAbsolute maximum ratings (Ta = 25°C)
Parameter
Symbol DTr1(NPN) DTr2(PNP)
Unit
Supply voltage
VCC
50
-50
V
Input voltage
VIN
-10 to 40
-40 to 10
V
Output current
IO
50
-50
mA
Collector current
IC(MAX)*1
100
-100
mA
Power dissipation
EMD3/ UMD3N
PD*2*3
150
mW/Total
IMD3A
PD*2*4
300
Junction temperature
Tj
150
℃
Range of storage temperature
Tstg
-55 to +150
℃
l
lElectrical characteristics (Ta = 25°C) <For DTr1(NPN)>
Parameter
Symbol
Conditions
Values
Unit
Min.
Typ.
Max.
Input voltage
VI(off)
VCC = 5V, IO = 100μA
-
-
0.5
V
VI(on)
VO = 0.3V, IO = 10mA
3.0
-
-
Output voltage
VO(on)
IO = 10mA, II = 0.5mA
-
100
300
mV
Input current
II
VI = 5V
-
-
880
μA
Output current
IO(off)
VCC = 50V, VI = 0V
-
-
500
nA
DC current gain
GI
VO = 5V, IO = 5mA
30
-
-
-
Input resistance
R1
-
7
10
13
kΩ
Resistance ratio
R2/R1
-
0.8
1.0
1.2
-
Transition frequency
fT*1
VCE = 10V, IE = -5mA,
f = 100MHz
-
250
-
MHz
l
lElectrical characteristics (Ta = 25°C) <For DTr2(PNP)>
Parameter
Symbol
Conditions
Values
Unit
Min.
Typ.
Max.
Input voltage
VI(off)
VCC = -5V, IO = -100μA
-
-
-0.5
V
VI(on)
VO = -0.3V, IO = -10mA
-3.0
-
-
Output voltage
VO(on)
IO = -10mA, II = -0.5mA
-
-100
-300
mV
Input current
II
VI = -5V
-
-
-880
μA
Output current
IO(off)
VCC = -50V, VI = 0V
-
-
-500
nA
DC current gain
GI
VO = -5V, IO = -5mA
30
-
-
-
Input resistance
R1
-
7
10
13
kΩ
Resistance ratio
R2/R1
-
0.8
1.0
1.2
-
Transition frequency
fT*1
VCE = -10V, IE = 5mA,
f = 100MHz
-
250
-
MHz
*1 Characteristics of built-in transistor
*2 Each terminal mounted on a reference land
*3 120mW per element must not be exceeded.
*4 200mW per element must not be exceeded.
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
2/9
20151020 - Rev.002



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