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MRF9130LR3 Datasheet(PDF) 1 Page - Motorola, Inc

Part # MRF9130LR3
Description  RF Power Field Effect Transistors
PDF  12 Pages
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Manufacturer  MOTOROLA [Motorola, Inc]
Direct Link  http://www.freescale.com
Logo MOTOROLA - Motorola, Inc

MRF9130LR3 Datasheet(HTML) 1 Page - Motorola, Inc

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MRF9130LR3 MRF9130LSR3
MOTOROLA RF DEVICE DATA
The RF Sub-Micron MOSFET Line
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for GSM and GSM EDGE base station applications with
frequencies from 921 to 960 MHz, the high gain and broadband performance
of these devices make them ideal for large-signal, common-source amplifier
applications in 28 volt base station equipment.
• Typical Performance for GSM Frequencies, 921 to 960 MHz, 28 Volts
Output Power @ P1dB — 135 Watts
Power Gain — 16.5 dB @ 130 Watts Output Power
Efficiency — 48% @ 130 Watts Output Power
• Internally Matched, Controlled Q, for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 5:1 VSWR, @ 28 Vdc, All Frequency Band,
130 Watts CW Output Power
• Excellent Thermal Stability
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• Low Gold Plating Thickness on Leads, 40µ″ Nominal.
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain-Source Voltage
VDSS
65
Vdc
Gate-Source Voltage
VGS
- 0.5, +15
Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
298
1.7
Watts
W/°C
Storage Temperature Range
Tstg
- 65 to +200
°C
Operating Junction Temperature
TJ
200
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
RθJC
0.6
°C/W
ESD PROTECTION CHARACTERISTICS
Test Conditions
Class
Human Body Model
1 (Minimum)
Machine Model
M2 (Minimum)
Charge Device Model
C7 (Minimum)
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Order this document
by MRF9130L/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MRF9130LR3
MRF9130LSR3
GSM/GSM EDGE
921-960 MHz, 130 W, 28 V
LATERAL N-CHANNEL
RF POWER MOSFETs
CASE 465-06, STYLE 1
NI-780
MRF9130LR3
CASE 465A-06, STYLE 1
NI-780S
MRF9130LSR3
Motorola, Inc. 2004
REV 2
Freescale Semiconductor, Inc.
For More Information On This Product,
Go to: www.freescale.com


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