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MB39C601 Datasheet(PDF) 8 Page - Cypress Semiconductor |
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MB39C601 Datasheet(HTML) 8 Page - Cypress Semiconductor |
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8 / 37 page  Document Number: 002-08393 Rev.*A Page 8 of 37 MB39C601 Parameter Symbol Pin No. Condition Value Unit Min Typ Max DRIVER Driver on- resistance RDS(on)(DRN) 6,7 IDRN=4.0A - 200* 400* m Ω Driver off leakage current IDRN(OFF) 6,7 VDRN=12V - 1.5 20.0 µA High-side driver on-resistance RDS(on)(HSDRV) 5,6 High-side Driver current=50mA - 6* 11* Ω DRN discharge current IDIS 6,7 VDD=OPEN, DRN=12V, Fault latch set 2.38 3.40 4.42 mA TRANSFORMER ZERO ENERGY DETECTION TZE zero energy threshold voltage VTZE(TH) 2 - 5* 20* 50* mV TZE clamp voltage VTZE(CLAMP) 2 ITZE= -10µA -200 -160 -100 mV Start timer operation threshold voltage VTZE(START) 2 - 0.10 0.15 0.20 V Driver turn-on Delay time tDRY(TZE) 6 150 Ω pull-up 12V on DRN - 150 - Ns Wait time for zero energy detection tWAIT(TZE) 6 - 2.0 2.4 2.8 µs Start timer period tST 6 VTZE=0V 150 240 300 µs OVERVOLTAGE FAULT OVP threshold voltage VTZE(OVP) 2 - 4.85 5.00 5.15 V OVP blanking time tBLANK, OVP 6 - 0.6 1.0 1.7 µs Input bias current ITZE(bias) 2 VTZE=5V -0.1 0 +0.1 µA OVERLOAD FAULT Over Load detection current IFB(OL) 1 - 0* 1.5* 3.0* µA Over Load delay time tOL 6 IFB=0A 200 250 300 Ms Retry time after Over Load tRETRY 6 ROTM=76kΩ - 750 - Ms Over Load detection boundary resistance ROTM(TH) 4 - 100 120 150 k Ω SHUTDOWN THRESHOLD Shutdown Threshold voltage VOTM(Vth) 4 OTM= 0.7 1.0 1.3 V Shutdown OTM current IOTM, PU 4 VOTM = VOTM(vth) -600 -450 -300 µA MAXIMUM ON TIME ON-Time tOTM 6 ROTM=383kΩ 3.74 4.17 4.60 µs 6 ROTM=76kΩ 3.4 3.8 4.2 µs OTM voltage VOTM 4 - 2.7 3.0 3.3 V OTP Protection temperature TSD - Tj, temperature rising - +150* - °C Protection temperature hysteresis TSD_HYS - Tj, temperature falling, degrees below TSD - 25* - °C |
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