SP8M8 datasheet(3/6 Pages) ROHM

3 / 6 page

SP8M8

Transistors

3/5

P-ch

Electrical characteristics (Ta=25

°C)

Parameter

Symbol

IGSS

Yfs

Min.

−−

−10

µA

Typ.

Max.

Unit

Conditions

V(BR) DSS

−30

−−

IDSS

−−

−1

µA

VGS (th)

−1.0

−−2.5

−

RDS (on)

−

Ω

−

3.5

−−

Ciss

−

850

−

Coss

−

190

120

−

Crss

−

td (on)

−

td (off)

−

8.5

−

2.5

−

Qgs

−

3.0

−

Qgd

−−

∗

Gate-source leakage

Drain-source breakdown voltage

Zero gate voltage drain current

Gate threshold voltage

Static drain-source on-state

resistance

Forward transfer admittance

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Total gate charge

Gate-source charge

Gate-drain charge

∗Pulsed

VGS

= −20V, VDS=0V

VDD

−15V

= −1mA, VGS=0V

VDS

= −30V, VGS=0V

VDS

= −10V, ID= −1mA

= −4.5A, VGS= −10V

= −2.5A, VGS= −4.5V

= −2.5A, VGS= −4.0V

= −2.5A, VDS= −10V

VDS

= −10V

VGS

=0V

=1MHz

VGS

= −10V

=6.0Ω

=10Ω

VGS

= −5V

= −4.5A

= −2.5A, VDD −15V

Body diode characteristics (Source-Drain Characteristics) (Ta=25

°C)

VSD

−−

−1.2

= −1.6A, VGS=0V

Parameter

Symbol

Min.

Typ.

Max.

Unit

Conditions

∗

Forward voltage

∗Pulsed

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