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TC1301 Datasheet(PDF) 2 Page - List of Unclassifed Manufacturers

Part # TC1301
Description  Low Noise and Medium Power GaAs FETs
PDF  6 Pages
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Manufacturer  ETC [List of Unclassifed Manufacturers]
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TC1301 Datasheet(HTML) 2 Page - List of Unclassifed Manufacturers

  TC1301 Datasheet HTML 1Page - List of Unclassifed Manufacturers TC1301 Datasheet HTML 2Page - List of Unclassifed Manufacturers TC1301 Datasheet HTML 3Page - List of Unclassifed Manufacturers TC1301 Datasheet HTML 4Page - List of Unclassifed Manufacturers TC1301 Datasheet HTML 5Page - List of Unclassifed Manufacturers TC1301 Datasheet HTML 6Page - List of Unclassifed Manufacturers  
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TC1301
REV.2_04/12/2004
TRANSCOM, INC., 90 Dasoong 7
th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: 886-6-5050086
Fax: 886-6-5051602
P 2 / 6
SG
S
G
S
G
S
D
D
D
760±
±±
± 12
290±
±±
± 12
ABSOLUTE MAXIMUM RATINGS (TA=25
°°°°C)
Symbol
Parameter
Rating
VDS
Drain-Source Voltage
7.0 V
VGS
Gate-Source Voltage
-3.0 V
IDS
Drain Current
IDSS
IGS
Gate Current
600
µA
Pin
RF Input Power, CW
20 dBm
PT
Continuous Dissipation
800 mW
TCH
Channel Temperature
175
°C
TSTG
Storage Temperature
- 65
°C to +175 °C
TYPICAL NOISE PARAMETERS (TA=25
°°°°C)
VDS = 4 V, IDS = 50 mA
Γopt
Frequency
NFopt
GA
MAG
ANG
Rn/50
2
0.36
19.7
0.88
15
0.28
4
0.48
16.6
0.74
39
0.18
6
0.59
14.3
0.62
64
0.15
8
0.70
12.7
0.55
92
0.12
10
0.78
11.7
0.50
120
0.09
12
0.85
10.9
0.49
148
0.06
14
0.98
10.4
0.50
174
0.04
16
1.12
9.8
0.51
-162
0.04
18
1.27
9.0
0.54
-141
0.07
CHIP DIMENSIONS
Units: Micrometers
Gate Pad: 75 x 70
Chip Thickness: 100
Drain Pad: 80 x 70
Source Pad: 75 x 80



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