HA1127FP datasheet(3/7 Pages) HITACHI

3 / 7 page

HA1127, HA1127P, HA1127FP

505

Electrical Characteristics (Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test Condition

Collector-base

breakdown voltage

V(BR)CBO

—

IC = 10 µA, IE = 0

Collector-emitter

breakdown voltage

V(BR)CEO

—

IC = 1 mA, RBE =

Collector-substrate

breakdown voltage

V(BR)CIO

—

IC = 10 µA, IE = 0, IB = 0

Emitter-base

breakdown voltage

V(BR)EBO

—

IE = 10 µA, IC = 0

Collector cutoff

ICBO

—

0.002 40

VCB = 10 V, IE = 0

current

ICEO

—

0.5

µA

VCE = 10 V, RBE =

Collector-emitter

saturation voltage

VCE(sat)

—

0.17

—

IC = 10 mA, IB = 1 mA

Base-emitter

VBE

—

0.72

—

VCE = 3 V

IC = 1 mA

voltage

—

0.80

—

IC = 10 mA

DC current

hFE

140

—

VEE = 3 V

IC = 1 mA

amplification ratio

—

120

—

IC = 10 mA

Gain-bandwidth

product

—

460

—

MHz

VCE = 3 V, IC = 3 mA

Collector output

capacitance

Cob

—

1.7

—

VCB = 3 V, IE = 0, f = 1 MHz

Emitter input

capacitance

Cin

—

2.0

—

VCB = 3 V, IE = 0, f = 1 MHz

Switching time

ton

—

VCC = 10 V, IC = 10IB1 = –10IB2 = 10 mA

toff

—

130

—

tstg

—

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