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DSEP 8-06B

IXYS reserves the right to change limits, test conditions and dimensions.

I

FAV

= 10 A

V

t

rr

= 30 ns

V

RSM

V

RRM

Type

V

V

600

600

DSEP 8-06B

Symbol

Conditions

Maximum Ratings

I

FRMS

35

A

I

FAVM

T

10

A

I

FSM

T

50

A

E

AS

T

0.1

mJ

I

I

AR

V

0.1

A

T

VJ

-55...+175

°C

T

VJM

175

°C

T

stg

-55...+150

°C

P

tot

T

60

W

M

d

mounting torque

0.4...0.6

Nm

Weight

typical

2

g

Symbol

Conditions

Characteristic Values

typ.

max.

I

R

①

T

V

60

µA

T

0.25

mA

V

F

②

I

T

1.66

V

T

2.66

V

R

thJC

2.5

K/W

R

thCH

0.5

K/W

t

rr

I

30

ns

V

I

RM

V

I

2.4

A

T

with soft recovery

Features

• International standard package

• Planar passivated chips

• Very short recovery time

• Extremely low switching losses

• Low I

• Soft recovery behaviour

• Epoxy meets UL 94V-0

Applications

• Antiparallel diode for high frequency

switching devices

• Antisaturation diode

• Snubber diode

• Free wheeling diode in converters

and motor control circuits

• Rectifiers in switch mode power

supplies (SMPS)

• Inductive heating

• Uninterruptible power supplies (UPS)

• Ultrasonic cleaners and welders

Advantages

• Avalanche voltage rated for reliable

operation

• Soft reverse recovery for low

EMI/RFI

• Low I

- Power dissipation within the diode

- Turn-onlossinthecommutatingswitch

Dimensions see Outlines.pdf

Pulse test:

Data according to IEC 60747 and per diode unless otherwise specified:

A = Anode, C = Cathode, TAB = Cathode

C

A

TO-220 AC

C (TAB)

C

A