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WS9224 Datasheet(PDF) 3 Page - Shenzhen Winsemi Microelectronics Co., Ltd |
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WS9224 Datasheet(HTML) 3 Page - Shenzhen Winsemi Microelectronics Co., Ltd |
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3 / 7 page ![]() www.winsemi.com Tel : +86-755-8250 6288 Fax : +86-755-8250 6299 3/7 WINSEMI MICROELECTRONICS WINSEMI MICROELECTRONICS WINSEMI MICROELECTRONICS WINSEMI MICROELECTRONICS WINSEMI MICROELECTRONICS WS9224ProductDescription Recommended Operation Conditions Part Number Package Input voltage Maximum output power WS9224 SOP7 175VAC-264VAC <12W 90VAC-264VAC <8W Absolute Maximum Ratings symbol paramete Range unit Icc_max VCC pin maximum sink current 2.5 mA Drain Internal HV MOSFET drain voltage -0.3~650 V CS Current sense pin input voltage -0.3~7 V TJ Operating junction temperature 165 ℃ TSTG Storage temperature range -55~165 ℃ Note 1: Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. Electrical Characteristics (Unless otherwise specified, VCC=8V and TA =25 ℃) Symbol Parameter Conditions Min Typ Max Units Supply Voltage Section VCC_Clamp VCC clamp voltage 1mA 17.8 18.8 19.8 V UVLO_off Turn-off threshold Voltage 14.3 15.3 16.3 V UVLO_on Turn on threshold Voltage 9 9.5 10 V IST VCC start up current VCC= 13V 150 205 250 uA IOP VCC operating current Fop=70KHz 140 uA Current Sense Section VCS_TH Threshold voltage for peak current limit 390 400 410 mV TLEB Leading edge blanking time for current sense 350 ns TDELAY Switch off delay time 200 ns Internal driver Section Toff_max Maximum Off Time 310 us Toff_min Minimum Off Time 3.5 us Ton_max Maximum On Time 100 us Tons_OVP Output OVP Threshold Time 7 us MOSFET Section RDS_ON Static drain-source on-resistance 8 9.5 Ω BVDSS Drain-source breakdown voltage 650 V IDSS Drain-source leakage current 1 uA Over Temperature Protection TREG Thermal Regulation Temperature 150 ℃ |
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