R3000 THRU R5000

200mA 3000V~5000V--High voltage silicon rectifier diode

GETE ELECTRONIC CO.,LTD

Http://www.getedz.com

GETAI ELECTRONIC DEVICE CO.,LTD TEL:0086-20-8184 9628

FAX:0086-20-8184 9638

2016 1 / 2

Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.

Characteristic

Symbols R3000 R4000 R5000 Units

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

3000

4000

5000

V

RMS Reverse Voltage

2100

2800

3500

V

200

mA

Non-Repetitive Peak Forward Surge Current 8.3ms

single half sine-wave superimposed on rated load

(JEDEC Method)

30

A

4.0

5.0

V

Peak Reverse Leakage Current at Rated DC Blocking Voltage

5.0

uA

Typical Junction Capacitance (Note 2)

30

pF

Typical Thermal Resistance Junction to Ambient

117

K/W

Operating and Storage Temperature Range

-65 to +150

°C

Notes: 1. Valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case.

2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.

HVGT high voltage silicon rectifier diodes is

made of high quality glass passivated chip and high

reliability epoxy resin sealing structure, and through

professional testing equipment inspection qualified

after to customers.

SHAPE DISPLAY:

SIZE: (Unit:mm)

HVGT NAME: DO-15

FEATURES:

1. Low cost .

2. Low leakage .

3. Low forward voltage drop .

4. Conform to RoHS.

5. High current capability.

APPLICATIONS:

1. High voltage multiplier circuit

2. Electrostatic generator circuit .

3. General purpose high voltage rectifier.

4. Other.

MECHANICAL DATA:

Case: JEDEC DO-15 molded plastic body

Terminals: Plated axial leads, solderable per

MIL-STD-750,

Method 2026

Polarity: Color band denotes cathode end

Mounting Position: Any.

Weight:0.014 ounce, 0.40 grams.