| Electronic Components Datasheet Search |
|
BLV32F Datasheet(PDF) 1 Page - Advanced Semiconductor |
|
|
|||||||||||||||||||||||||||||
BLV32F Datasheet(HTML) 1 Page - Advanced Semiconductor |
|
|
1 / 1 page ![]() A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1 Specifications are subject to change without notice. CHARACTERISTICS TC = 25 OC SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 100 mA 32 V BVCES IC = 15 mA 60 V BVEBO IE = 10 mA 4.0 V ICES VCE = 32 V 5.0 mA hFE VCE = 25 V IC = 1.6 A 20 120 --- CC VCB = 25 V f = 1.0 MHz 50 pF PG VCE = 25 V POUT = 10 W f = 224 MHz 16 dB NPN SILICON RF POWER TRANSISTOR BLV32F DESCRIPTION: The ASI BLV32F is Designed for in linear v.h.f. amplifiers of television transmitters and transporters. FEATURES: • Diffused emitter ballasting resistors • P G = 16 dB at 10 W/224 MHz • Omnigold™ Metalization System MAXIMUM RATINGS IC 4.0 A VCBO 60 V VCEO 32 V VCES 60 V VEBO 4.0 V PDISS 82 W @ TC = 25 OC TJ -65 OC to +200 OC TSTG -65 OC to +150 OC θθθθ JC 2.1 OC/W PACKAGE STYLE .500 6L FLG 1= Collector 2= Base 3 and 4= Emitter |
Similar Part No. - BLV32F |
|
Similar Description - BLV32F |
|
|
Link URL |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link to Datasheet | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |