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EMD3 Datasheet(PDF) 2 Page - Rohm

Part # EMD3
Description  NPN PNP Complex Digital Transistors
PDF  12 Pages
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Manufacturer  ROHM [Rohm]
Direct Link  http://www.rohm.com
Logo ROHM - Rohm

EMD3 Datasheet(HTML) 2 Page - Rohm

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© 2013 ROHM Co., Ltd. All rights reserved.
Data Sheet
EMD3 / UMD3N / IMD3A
l
Absolute maximum ratings (Ta = 25C)
l
Electrical characteristics(Ta = 25°C) <For DTr1(NPN)>
l
Electrical characteristics(Ta = 25°C) <For DTr2(PNP)>
*1 Characteristics of built-in transistor
*2 Each terminal mounted on a reference footprint
*3 120mW per element must not be exceeded.
*4 200mW per element must not be exceeded.
Parameter
Symbol
DTr1(NPN)
DTr2(PNP)
Unit
Supply voltage
VCC
50
-
50
V
Input voltage
VIN
-
10 to +40
-
40 to +10
V
Output current
IO
50
-
50
mA
Collector current
IC(MAX.)*1
100
-
100
mA
Power dissipation
EMD3 / UMD3N
PD *2
150 (Total)*3
mW
Range of storage temperature
Tstg
-
55 to +150
°C
Min.
Typ.
Max.
Unit
IMD3A
300 (Total)*4
mW
Junction temperature
Tj
150
°C
-
7
10
13
kW
30
-
-
mA
-
-
0.5
m
A
-
-
0.88
Min.
Typ.
Max.
Unit
-
-
250
-
MHz
0.8
1
1.2
-
7
10
13
kW
30
-
-
mA
-
-
-
0.5
m
A
-
-
-
0.88
-
-
250
-
MHz
0.8
1
1.2
Resistance ratio
R2/R1
-
Transition frequency
fT *1
VCE = -10V, IE = 5mA
f = 100MHz
V
VI(on)
VO = 0.3V, IO = 10mA
Output voltage
VO(on)
IO / II = 10mA / 0.5mA
V
Input current
II
VI = 5V
-
0.1
0.3
3.0
-
-
-
-
0.5
Input voltage
VI(off)
VCC = 5V, IO = 100mA
fT *1
VCE = 10V, IE = -5mA
f = 100MHz
Parameter
Symbol
Conditions
Parameter
Symbol
Conditions
Output current
IO(off)
VCC = 50V, VI = 0V
DC current gain
GI
VO = 5V, IO = 5mA
Input resistance
R1
-
Resistance ratio
R2/R1
-
Transition frequency
V
VI(on)
VO = -0.3V, IO = -10mA
Output voltage
VO(on)
IO / II = -10mA / -0.5mA
V
Input current
II
VI = -5V
-
-
0.1
-
0.3
-
3.0
-
-
-
-
-
0.5
Input voltage
VI(off)
VCC = -5V, IO = -100mA
Output current
IO(off)
VCC = -50V, VI = 0V
DC current gain
GI
VO = -5V, IO = -5mA
Input resistance
R1
-
2/8
2013.07 - Rev.E
EMD3FHA / UMD3NFHA / IMD3AFRA
EMD3FHA / UMD3NFHA
IMD3AFRA



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