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BAS40HM Datasheet(PDF) 1 Page - Rohm |
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BAS40HM Datasheet(HTML) 1 Page - Rohm |
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1 / 7 page ![]() Datasheet www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. Schottky Barrier Diode BAS40HM Application Dimensions (Unit : mm) Land Size Figure (Unit : mm) Small current rectification Features 1) Small mold type Structure 2) High reliability 3) Low VF Construction Taping Dimensions (Unit : mm) Silicon epitaxial planar type Absolute Maximum Ratings (Ta= 25°C) Symbol Unit Repetitive peak reverse voltage VRM V Reverse voltage VR V Average forward rectified current IF mA Repetitive peak forward current IFRM mA Operating junction temperature Tj °C Storage temperature Tstg °C Electrical Characteristics (Tj= 25°C) Symbol Min. Typ. Max. Unit VF1 - - 0.38 V VF2 - - 0.50 V VF3 -- 1 V IR1 -- 1 A IR2 -- 10 A A t ≦1s, Duty≦0.5 40 Duty≦0.5 Parameter Limits Conditions 40 150 55 to 150 Direct reverse voltage Conditions non-repetitive at Ta=25ºC - - 120 Direct current 120 Square wave, tp<10ms, 0.6 (SOT-23) IF=10mA IF=40mA VR=40V Forward voltage VR=30V Reverse current IF=1mA Parameter IFSM Non-repetitive forward surge current 4A ROHM : SSD3 JEDEC : SOT-23 JEITA : - SOT-23 1.9 1.0MIN 0.8MIN 2.4 Cathode Anode (1) (2) (3) (1) (2) (3) NC T116 1/3 2016.11 - Rev.B |
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