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MBR3045ST Datasheet(PDF) 1 Page - ON Semiconductor

Part # MBR3045ST
Description  Switch?릑ode Power Rectifier
PDF  5 Pages
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

MBR3045ST Datasheet(HTML) 1 Page - ON Semiconductor

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© Semiconductor Components Industries, LLC, 2014
September, 2014 − Rev. 9
1
Publication Order Number:
MBR3045ST/D
MBR3045ST,
MBRB3045CT-1
Switch‐mode
Power Rectifier
Features and Benefits
• Dual Diode Construction − Terminals 1 and 3 May Be Connected for
Parallel Operation at Full Rating
• 45 V Blocking Voltage
• Low Forward Voltage Drop
• 175°C Operating Junction Temperature
• These are Pb-Free Devices
Applications
• Power Supply − Output Rectification
• Power Management
• Instrumentation
Mechanical Characteristics
• Case: Epoxy, Molded
• Weight (Approximately): 1.9 Grams (TO−220)
1.5 Grams (TO−262)
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
• Lead Temperature for Soldering Purposes:
260
°C Max. for 10 Seconds
• Epoxy Meets UL 94 V−0 @ 0.125 in
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
45
V
Average Rectified Current
Per Device
(TC = 130°C)
Per Diode
IF(AV)
30
15
A
Peak Repetitive Forward Current, per Diode
(Square Wave, VR = 45 V, 20 kHz)
IFRM
30
A
Non-Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions,
Halfwave, Single Phase, 60 Hz)
IFSM
150
A
Peak Repetitive Reverse Current, per Diode
(2.0
ms, 1.0 kHz)
IRRM
2.0
A
Storage Temperature Range
Tstg
−65 to
+175
°C
Operating Junction Temperature (Note 1)
TJ
−65 to
+175
°C
Peak Surge Junction Temperature
(Forward Current Applied)
TJ(pk)
175
°C
Voltage Rate of Change (Rated VR)
dv/dt
10,000
V/
ms
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. The heat generated must be less than the thermal conductivity from
Junction-to-Ambient: dPD/dTJ < 1/RqJA.
http://onsemi.com
TO−220
CASE 221A
STYLE 6
3
4
1
SCHOTTKY BARRIER
RECTIFIER
30 AMPERES
45 VOLTS
3
1
2, 4
2
AYWW
B3045G
AKA
MARKING
DIAGRAMS
A
= Assembly Location
Y
= Year
WW
= Work Week
AKA
= Polarity Designator
G
= Pb−Free Device
I2PAK (TO−262)
CASE 418D
STYLE 3
AYWW
B3045CTG
AKA
3
4
1
2
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
ORDERING INFORMATION


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