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TSUS6402 Datasheet(PDF) 2 Page - Vishay Siliconix

Part # TSUS6402
Description  Infrared Emitting Diode, 950 nm, GaAs
PDF  5 Pages
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

TSUS6402 Datasheet(HTML) 2 Page - Vishay Siliconix

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TSUS6402
www.vishay.com
Vishay Semiconductors
Rev. 1.0, 28-May-15
2
Document Number: 84318
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
Fig. 2 - Forward Current Limit vs. Ambient Temperature
0
20
40
60
80
100
120
140
160
180
0
1020
3040506070
8090100
21313
T
amb - Ambient Temperature (°C)
R
thJA = 230 K/W
0
20
40
60
80
100
120
0
10
203040
50607080
90 100
T
amb - Ambient Temperature (°C)
21314
R
thJA = 230 K/W
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
Forward voltage
IF = 100 mA, tp = 20 ms
VF
1.3
1.7
V
Temperature coefficient of VF
IF = 100 mA
TKVF
- 1.3
mV/K
Reverse current
VR = 5 V
IR
100
μA
Junction capacitance
VR = 0 V, f = 1 MHz, E = 0
Cj
30
pF
Radiant intensity
IF = 100 mA, tp = 20 ms
Ie
15
30
50
mW/sr
IF = 1.5 A, tp = 100 μs
Ie
120
190
mW/sr
Radiant power
IF = 100 mA, tp = 20 ms
e
15
mW
Temperature coefficient of
e
IF = 20 mA
TK
e
- 0.8
%/K
Angle of half intensity
± 22
deg
Peak wavelength
IF = 100 mA
p
950
nm
Spectral bandwidth
IF = 100 mA

50
nm
Temperature coefficient of
p
IF = 100 mA
TK
p
0.2
nm/K
Rise time
IF = 100 mA
tr
800
ns
IF = 1.5 A
tr
400
ns
Fall time
IF = 100 mA
tf
800
ns
IF = 1.5 A
tf
400
ns
Virtual source diameter
d
2.9
mm
Forward voltage
IF = 1.5 A, tp = 100 μs
VF
2.2
2.7
V



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