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TPV376 Datasheet(PDF) 1 Page - Advanced Semiconductor |
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TPV376 Datasheet(HTML) 1 Page - Advanced Semiconductor |
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1 / 2 page ![]() A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1 Specifications are subject to change without notice. CHARACTERISTICS T C = 25 OC SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 100 mA 30 V BVCER IC = 100 mA RBE = 10 Ω 60 V BVCBO IC = 100 mA 60 V BVEBO IE = 20 mA 4.0 V hFE VCE = 5.0 V IC = 1.0 A 10 120 --- Cob VCB = 30 V f = 1.0 MHz 150 pF Pout VCE = 28 V IC = 3.5 A f = 225 MHz 20 W ψ ψ VCE = 28 V IE = 3.5 A PREF =20 W LOAD VSWR = ∞:1 f = 225 MHz NO DEGRADATION IN OUTPUT POWER IMD 1 Pref = 30 W VISION CARRIER = -8.0 dB SOUND CARRIER = -7.0 dB SIDEBAND SIG . = -16 dB VCE = 28 V IE = 3.5 A f = 225 MHz -53 dB NPN SILICON RF POWER TRANSISTOR TPV376 DESCRIPTION: The ASI TPV376 is a Common Emitter Device Designed for High Linearity Class A Television Band III (170-230 MHz) Applications. FEATURES INCLUDE: • Gold Metalization • Emitter Ballasting MAXIMUM RATINGS IC 16 A VCB 60 V PDISS 150 W @ TC = 25 OC TJ -65 OC to +200 OC TSTG -65 OC to +150 OC θθ JC 1.2 OC/W PACKAGE STYLE .550 4L STUD(1/4) |
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