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LMH6624MA Datasheet(PDF) 15 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor. Click here to check the latest version.
Part # LMH6624MA
Description  Single/Dual Ultra Low Noise Wideband Operational Amplifier
PDF  20 Pages
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Manufacturer  NSC [National Semiconductor (TI)]
Direct Link  http://www.national.com
Logo NSC - National Semiconductor (TI)

LMH6624MA Datasheet(HTML) 15 Page - National Semiconductor (TI)

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Application Section (Continued)
(1)
R
f||Rg =Rseq for bias current cancellation. Figure 4 illus-
trates the equivalent noise model using this assumption.
Figure 5 is a plot of e
ni against equivalent source resistance
(R
seq) with all of the contributing voltage noise source of
Equation 2. This plot gives the expected e
ni for a given (Rseq)
which assumes R
f||Rg =Rseq for bias current cancellation.
The total equivalent output voltage noise (e
no)iseni*AV.
(2)
As seen in Figure 5,e
ni is dominated by the intrinsic voltage
noise (e
n) of the amplifier for equivalent source resistances
below 33.5
Ω. Between 33.5Ω and 6.43kΩ,e
ni is dominated
by the thermal noise (e
t =
√(4kT(2R
seq)) of the external
resistor. Above 6.43k
Ω,e
ni is dominated by the amplifier’s
current noise (i
n = √(2) inRseq). When Rseq = 464
Ω (ie.,
e
n/√(2) in) the contribution from voltage noise and current
noise of LMH6624/LMH6626 is equal.. For example, config-
ured with a gain of +20V/V giving a −3dB of 90MHz and
driven from R
seq =25
Ω, the LMH6624 produces a total
equivalent input noise voltage (e
ni x
1.57*90MHz) of
16.5µV
rms.
If bias current cancellation is not a requirement, then R
f||Rg
need not equal R
seq. In this case, according to Equation 1,
R
f||Rg should be as low as possible to minimize noise.
Results similar to Equation 1 are obtained for the inverting
configuration of Figure 2 if R
seq is replaced by Rb and Rg is
replaced by R
g +Rs. With these substitutions, Equation 1 will
yield an e
ni referred to the non-inverting input. Referring eni
to the inverting input is easily accomplished by multiplying
e
ni by the ratio of non-inverting to inverting gains.
NOISE FIGURE
Noise Figure (NF) is a measure of the noise degradation
caused by an amplifier.
(3)
The Noise Figure formula is shown in Equation 3. The addi-
tion of a terminating resistor R
T, reduces the external ther-
mal noise but increases the resulting NF. The NF is in-
creased because R
T reduces the input signal amplitude thus
reducing the input SNR.
(4)
The noise figure is related to the equivalent source resis-
tance (R
seq) and the parallel combination of Rf and Rg.To
minimize noise figure.
•
Minimize R
f||Rg
•
Choose the Optimum R
S (ROPT)
R
OPT is the point at which the NF curve reaches a minimum
and is approximated by:
R
OPT
≈ e
n/in
NON-INVERTING GAINS LESS THAN 10V/V
Using the LMH6624/LMH6626 at lower non-inverting gains
requires external compensation such as the shunt compen-
sation as shown in Figure 6. The compensation capacitors
are chosen to reduce frequency response peaking to less
than 1dB.
INVERTING GAINS LESS THAN 10V/V
The lag compensation of Figure 7 will achieve stability for
lower gains. It is best used for the inverting configuration
because of its affect on the non-inverting input impedance.
20058921
FIGURE 4. Noise Model with R
f||Rg =Rseq
20058922
FIGURE 5. Voltage Noise Density vs. Source
Resistance
20058924
FIGURE 6. External Shunt Compensation
www.national.com
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