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LMH6624MA Datasheet(PDF) 15 Page - National Semiconductor (TI) |
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LMH6624MA Datasheet(HTML) 15 Page - National Semiconductor (TI) |
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15 / 20 page ![]() Application Section (Continued) (1) R f||Rg =Rseq for bias current cancellation. Figure 4 illus- trates the equivalent noise model using this assumption. Figure 5 is a plot of e ni against equivalent source resistance (R seq) with all of the contributing voltage noise source of Equation 2. This plot gives the expected e ni for a given (Rseq) which assumes R f||Rg =Rseq for bias current cancellation. The total equivalent output voltage noise (e no)iseni*AV. (2) As seen in Figure 5,e ni is dominated by the intrinsic voltage noise (e n) of the amplifier for equivalent source resistances below 33.5 Ω. Between 33.5Ω and 6.43kΩ,e ni is dominated by the thermal noise (e t = √(4kT(2R seq)) of the external resistor. Above 6.43k Ω,e ni is dominated by the amplifier’s current noise (i n = √(2) inRseq). When Rseq = 464 Ω (ie., e n/√(2) in) the contribution from voltage noise and current noise of LMH6624/LMH6626 is equal.. For example, config- ured with a gain of +20V/V giving a −3dB of 90MHz and driven from R seq =25 Ω, the LMH6624 produces a total equivalent input noise voltage (e ni x 1.57*90MHz) of 16.5µV rms. If bias current cancellation is not a requirement, then R f||Rg need not equal R seq. In this case, according to Equation 1, R f||Rg should be as low as possible to minimize noise. Results similar to Equation 1 are obtained for the inverting configuration of Figure 2 if R seq is replaced by Rb and Rg is replaced by R g +Rs. With these substitutions, Equation 1 will yield an e ni referred to the non-inverting input. Referring eni to the inverting input is easily accomplished by multiplying e ni by the ratio of non-inverting to inverting gains. NOISE FIGURE Noise Figure (NF) is a measure of the noise degradation caused by an amplifier. (3) The Noise Figure formula is shown in Equation 3. The addi- tion of a terminating resistor R T, reduces the external ther- mal noise but increases the resulting NF. The NF is in- creased because R T reduces the input signal amplitude thus reducing the input SNR. (4) The noise figure is related to the equivalent source resis- tance (R seq) and the parallel combination of Rf and Rg.To minimize noise figure. • Minimize R f||Rg • Choose the Optimum R S (ROPT) R OPT is the point at which the NF curve reaches a minimum and is approximated by: R OPT ≈ e n/in NON-INVERTING GAINS LESS THAN 10V/V Using the LMH6624/LMH6626 at lower non-inverting gains requires external compensation such as the shunt compen- sation as shown in Figure 6. The compensation capacitors are chosen to reduce frequency response peaking to less than 1dB. INVERTING GAINS LESS THAN 10V/V The lag compensation of Figure 7 will achieve stability for lower gains. It is best used for the inverting configuration because of its affect on the non-inverting input impedance. 20058921 FIGURE 4. Noise Model with R f||Rg =Rseq 20058922 FIGURE 5. Voltage Noise Density vs. Source Resistance 20058924 FIGURE 6. External Shunt Compensation www.national.com 15 |
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