2

Absolute Maximum Ratings [AMMC-6440]

Symbols

Parameters

Units

Min.

Max.

Notes

Vd-Vg

Drain to Gate Voltage

V

8

Vd

Positive Supply Voltage

V

5.5

Vg

Gate Supply Voltage

V

-2.5

0.5

Id

Drain Current

mA

TBD

2

PD

Power Dissipation

W

5.5

2, 3

Pin

CW Input Power

dBm

20

2

Tch

Operating Channel Temp

qC

+150

4

Tstg

Storage Case Temp.

qC

-65 to +155

Tmax

Maximum Assembly Temp (30 sec max)

qC

+320

Notes:

1. Operation in excess of any one of these conditions may result in permanent damage to this device. Functional operation at or near these

limitations will significantly reduce the lifetime of the device.

2. Dissipated power PD is in any combination of DC voltage, Drain Current, input power and power delivered to the load.

3. When operated at maximum PD with a base plate temperature of 85

qC, the median time to failure (MTTF) is significantly reduced.

4. These ratings apply to each individual FET. The operating channel temperature will directly affect the device MTTF.

For maximum life, it is recommended that junction temperatures (Tj) be maintained at the lowest possible levels. See MTTF vs. Channel tem-

perature Table

Symbol

Parameters and Test Conditions

Units

Min.

Typ.

Max.

Drain Supply Current

(under any RF power drive and temperature)

mA

950

1050

Gate Supply Operating Voltage

V

-0.85

-0.7

-0.65

°C/W

6.4

Notes:

Thermal Properties

Parameter

Test Conditions

Value

Maximum Power Dissipation

Tbaseplate = 85°C

PD = 5.5W

Tchannel = 150°C

Thermal Resistance (

Tjc)

Vd = 5.5V

Id = 950mA

PD = 5.23W

Tbaseplate = 85°C

Tjc = 6.4°C/W

Tchannel = 118°C

Thermal Resistance (

Tjc)

Under RF Drive

Vd = 5.5V

Id = 1095mA

Pout = 28dBm

Pd = 5.43W

Tbaseplate = 85°C

Tjc = 6.4°C/W

Tchannel = 120°C