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AND8116 Datasheet(PDF) 4 Page - ON Semiconductor |
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AND8116 Datasheet(HTML) 4 Page - ON Semiconductor |
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4 / 8 page ![]() AND8116/D http://onsemi.com 4 Based on the relay coil specifications, the energy that is transferred to the driver by the relay’s coils can be theoretically calculated by using the formula E = ½ L I2, which results in 0.331 mJ. The avalanche energy capability of the NUD3105 and NUD3112 devices is 50 mJ, so the 0.331 mJ transferred by the OMRON relay only represents a 0.65% of their energy capability. The same theoretical principle (E = ½ L I2) can be used to find out the type of relay’s coils that the NUD3105 and NUD3112 devices can drive. For these purposes, one needs to know the inductance and current characteristics of the relay’s coil to calculate the energy that will be transferred. The resulting energy should not exceed the 50 mJ at which the devices are rated. Automotive Version Figure 5 describes the automotive relay driver version (device NUD3124). This device also integrates several discrete components in a single SOT−23 three leaded surface mount package to achieve a simpler and even more robust solution than the conventional discrete relay drivers. The characteristics of the integrated devices are listed below: • N−channel FET 40 V, 150 mA • ESD protection Zener diodes (14 V) • Bias resistors (10 kW in the gate and 100 kW between gate and source) • Clamping protection Zener diodes (28 V) to perform as an active clamp function. Figure 5. Automotive Relay Driver Description (NUD3124 Device) 10 k 100 k ESD Zener 14 V ESD Zener 14 V Clamp Zener 28 V Clamp Zener 28 V Gate (1) Drain (3) Source (2) ESD Zener 14 V ESD Zener 14 V The 40 V N−channel FET is designed to switch on and off the relay’s coil for currents up to 200 mA. The clamping protection Zener diodes (28 V) provides an active clamp function to drain to ground the voltage spikes generated by the relay’s coils during the turn−off interactions (V = Ldi/dt). This function is achieved by partially activating the FET through the clamp Zener diodes anytime the voltage across them reaches their breakdown voltage level (28 V). The ESD protection Zener diodes protects the gate−source silicon junction against ESD conditions possibly induced by persons during the handling or assembly of the device. And the bias resistor provides the drive control signals to the FET. Figure 6 illustrates the typical connection diagram of the NUD3124 device. Figure 6. Typical Connection Diagram for Automotive Relay Driver (NUD3124 Device) 10 k 100 k ESD Zener 14 V ESD Zener 14 V Clamp Zener 28 V Clamp Zener 28 V Gate (1) +12 V (Car’s Battery) Source (2) ESD Zener 14 V ESD Zener 14 V RELAY LOGIC NUD3124 When positive logic voltage is applied to the gate of the device (5.0 V/3.3 V), the FET is turned−on which activates the relay. When the FET is turned−off, the relay’s coil is deactivated which causes it to kickback and generates a high voltage spike. This voltage spike causes the clamp Zener diodes (28 V) to breakdown which partially activates the FET to drain this condition to ground. This operation sequence is repeated for all the on and off operations of the relay driver. |
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