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LMV243 Datasheet(PDF) 3 Page - National Semiconductor (TI) |
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LMV243 Datasheet(HTML) 3 Page - National Semiconductor (TI) |
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3 / 13 page ![]() Electrical Characteristics Unless otherwise specified, all limits are guaranteed to T J = 25˚C. VDD = 2.8V. Boldface limits apply at temperature extremes. (Continued) Symbol Parameter Condition Min Typ Max Units V O Output Swing from Rail Sourcing, I O = 5mA 55 85 105 mV Sinking, I O = −5mA 45 75 95 I O Output Short Circuit Current (Note 3) Sourcing, V O =0V 25 145 mA Sinking, V O = 2.8V 25 180 e n Output Referred Noise RF input = 1800 MHz, -10dBm, 20k Ω // 27pF between V OUT and VCOMP, V OUT =1.4V, set by VRAMP, (Note 8) 700 nV/ SR Slew Rate 8 5 11 V/µs Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is intended to be functional, but specific performance is not guaranteed. For guaranteed specifications and the test conditions, see the Electrical Characteristics. Note 2: Human body model: 1.5k Ω in series with 100pF. Machine model, 0Ω in series with 100pF. Note 3: Shorting circuit output to either V+ or V− will adversely affect reliability. Note 4: Electrical Table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very limited self-heating of the device such that TJ =TA. No guarantee of parametric performance is indicated in the electrical tables under conditions of internal self-heating where TJ > TA. Note 5: Power in dBV = dBm + 13 when the impedance is 50 Ω. Note 6: The maximum power dissipation is a function of TJ(MAX) , θJA and TA. The maximum allowable power dissipation at any ambient temperature is PD = (TJ(MAX) -TA)/θJA. All numbers apply for packages soldered directly into a PC board Note 7: All limits are guaranteed by design or statistical analysis Note 8: Typical values represent the most likely parametric norm. Note 9: Slope and intercept are calculated from graphs ’VOUT vs. RF input Power’ where the current is obtained by division of the voltage by 20kΩ. Connection Diagram 8-Bump micro SMD 20029035 Top View www.national.com 3 |
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