NTP27N06, NTB27N06

http://onsemi.com

2

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain–to–Source Breakdown Voltage (Note 1.)

(VGS = 0 Vdc, ID = 250 µAdc)

Temperature Coefficient (Positive)

V(BR)DSS

60

–

70

79.4

–

–

Vdc

mV/

°C

Zero Gate Voltage Drain Current

(VDS = 60 Vdc, VGS = 0 Vdc)

(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150°C)

IDSS

–

–

–

–

1.0

10

µAdc

Gate–Body Leakage Current (VGS = ±20 Vdc, VDS = 0 Vdc)

IGSS

–

–

±100

nAdc

ON CHARACTERISTICS (Note 1.)

Gate Threshold Voltage (Note 1.)

(VDS = VGS, ID = 250 µAdc)

Threshold Temperature Coefficient (Negative)

VGS(th)

2.0

–

2.8

6.9

4.0

–

Vdc

mV/

°C

Static Drain–to–Source On–Resistance (Note 1.)

(VGS = 10 Vdc, ID = 13.5 Adc)

RDS(on)

–

37.5

46

m

W

Static Drain–to–Source On–Resistance (Note 1.)

(VGS = 10 Vdc, ID = 27 Adc)

(VGS = 10 Vdc, ID = 13.5 Adc, TJ = 150°C)

VDS(on)

–

–

1.05

2.12

1.5

–

Vdc

Forward Transconductance (Note 1.) (VDS = 7.0 Vdc, ID = 6.0 Adc)

gFS

–

13.2

–

mhos

DYNAMIC CHARACTERISTICS

Input Capacitance

(V

25 Vd

V

0 Vd

Ciss

–

725

1015

pF

Output Capacitance

(VDS = 25 Vdc, VGS = 0 Vdc,

f = 1.0 MHz)

Coss

–

213

300

Transfer Capacitance

f = 1.0 MHz)

Crss

–

58

120

SWITCHING CHARACTERISTICS (Note 2.)

Turn–On Delay Time

td(on)

–

13.6

30

ns

Rise Time

(VDD = 30 Vdc, ID = 27 Adc,

VGS =10Vdc

tr

–

62.7

125

Turn–Off Delay Time

VGS = 10 Vdc,

RG = 9.1 Ω) (Note 1.)

td(off)

–

26.6

60

Fall Time

RG 9.1 Ω) (Note 1.)

tf

–

70.4

140

Gate Charge

(V

48 Vd

I

27 Ad

QT

–

21.2

30

nC

(VDS = 48 Vdc, ID = 27 Adc,

VGS = 10 Vdc) (Note 1.)

Q1

–

5.6

–

VGS = 10 Vdc) (Note 1.)

Q2

–

7.3

–

SOURCE–DRAIN DIODE CHARACTERISTICS

Forward On–Voltage

(IS = 27 Adc, VGS = 0 Vdc) (Note 1.)

(IS = 27 Adc, VGS = 0 Vdc, TJ = 150°C)

VSD

–

–

1.05

0.93

1.25

–

Vdc

Reverse Recovery Time

(I

27 Ad

V

0 Vd

trr

–

42

–

ns

(IS = 27 Adc, VGS = 0 Vdc,

dIS/dt = 100 A/µs) (Note 1.)

ta

–

26

–

dIS/dt = 100 A/µs) (Note 1.)

tb

–

16

–

Reverse Recovery Stored Charge

QRR

–

0.07

–

µc

1. Pulse Test: Pulse Width

≤ 300 µs, Duty Cycle ≤ 2%.

2. Switching characteristics are independent of operating junction temperature.