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LMX3161 Datasheet(PDF) 5 Page - National Semiconductor (TI) |
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LMX3161 Datasheet(HTML) 5 Page - National Semiconductor (TI) |
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5 / 14 page ![]() Absolute Maximum Ratings (Notes 1, 2) Power Supply Voltage (V CC) −0.3V to +6.5V V P −0.3V to +6.5V Voltage on Any Pin with GND = 0V (V I) −0.3V to V CC +0.3V Storage Temperature Range (T S) −65˚C to +150˚C Lead Temp. (solder, 4 sec)(T L) +260˚C Recommended Operating Conditions Supply Voltage (V CC) 3.0V to 5.5V (V P)VCC to 5.5V Operating Temperature (T A) −10˚C to +70˚C Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Recommended Operating Conditions indicate condi- tions for which the device is intended to be functional, but do not guarantee specific performance limits. For guaranteed specifications and test condi- tions, see the Electrical Characteristics section. The guaranteed specifica- tions apply only for the test conditions listed. Note 2: This device is a high performance RF integrated circuit with an ESD rating < KeV and is ESD sensitive. Handling and assembly of this device should only be done at ESD work stations. Electrical Characteristics The following specifications are guaranteed for V CC = 3.6V and TA = 25˚C, unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Current Consumption I DD, RX -Open-Loop Receive Mode PLL & TX chain powered down — 50 60 mA I DD, TX -Open-Loop Transmit Mode PLL & RX chain powered down — 27 37 mA I DD, PLL -Closed-Loop PLL Mode RX & TX chain powered down — 6 8 mA I PD -Power Down Mode — — 70 µA MIXER f RF = 1.89 GHz, fIF = 110 MHz, f LO = 1780 MHz (fIN = 890 MHz) f RF RF Frequency Range (Note 3) 1.7 — 2.0 GHz f IF IF Frequency (Note 4) — 110 — MHz Z IN Input Impedance, RF IN — 15-j5 — Ω Z OUT Output Impedance, Mixer Out — 160-j70 — Ω NF Noise Figure (Single Side Band) (Notes 5, 6) — 10 14 dB G C Conversion Gain (Note 5) 14 17 — dB P 1dB Input 1dB Compression Point (Note 5) −24 −20 — dBm OIP3 Output 3rd Order Intercept Point (Note 5) — 7.5 — dBm F IN-RF Fin to RF Isolation F IN=890 MHz — −30 — dB f IN=1780 MHz — −10.6 — dB f IN=2670 MHz — −30 — dB F IN-IF Fin to IF Isolation f IN=890 MHz — −30 — dB f IN=1780 MHz — −30 — dB f IN=2670 MHz — −30 — dB RF–IF RF to IF Isolation P IN=0 to −85 dB — −30 — dB IF AMPLIFIER f IN = 110 MHz NF Noise Figure (Note 7) — 8 11 dB A V Gain (Note 7) 15 24 — dB Z IN Input Impedance — 150–j120 — Ω Z OUT Output Impedance — 190–j20 — Ω IF LIMITER f IN = 110 MHz Sens Limiter/Discriminator Sensitivity BER=10 −3 — −65 — dBm IF IN IF Limiter Input Impedance — 100–j300 — Ω DISCRIMINATOR f IN = 110 MHz Disc Gain 1X Mode — 10 — mV/˚ (mV/˚ of Phase Shift from Tank Circuit) 3X Mode — 33 — mV/˚ V OUT Discriminator Output Peak to Peak 1X Mode (Note 8) 80 160 — mV Voltage 3X Mode (Note 8) 400 580 — mV V OS Disc. Output DC Voltage Nominal (Note 10) 1.2 1.82 V DISC OUT Disc. Output Impedance — 300 — Ω www.national.com 5 |
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