UTRON

UT62L1024

Rev. 1.7

128K X 8 BIT LOW POWER CMOS SRAM

UTRON TECHNOLOGY INC.

P80033

1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C.

TEL: 886-3-5777882 FAX: 886-3-5777919

3



ABSOLUTE MAXIMUM RATINGS*

PARAMETER

SYMBOL

RATING

UNIT

Terminal Voltage with Respect to Vss

-0.5 to +4.6

V

Operating Temperature

0 to +70

℃

Storage Temperature

-65 to +150

℃

Power Dissipation

1

W

DC Output Current

50

mA

Soldering Temperature (under 10 sec)

260

℃

*Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a

stress rating only and functional operation of the device or any other conditions above those indicated in the operational

sections of this specification is not implied. Exposure to the absolute maximum rating conditions for extended period may affect

device reliability.

TRUTH TABLE

MODE

1

CE

CE2

OE

WE

I/O OPERATION

SUPPLY CURRENT

Standby

H

X

X

X

High - Z

Standby

X

L

X

X

High -Z

Output Disable

L

H

H

H

High - Z

Read

L

H

L

H

Write

L

H

X

L

PARAMETER

SYMBOL TEST CONDITION

MIN. TYP.

MAX. UNIT

Input High Voltage

2.0

-

V

Input Low Voltage

- 0.5

-

0.6

V

Input Leakage Current

- 1

-

1

µA

Output Leakage Current

1

- 1

-

1

µA

Output High Voltage

2.2

-

-

V

Output Low Voltage

-

-

0.4

V

35

-

40

60

mA

55

-

35

50

mA

Cycle time =Min. 100% Duty,

1

70

-

30

40

mA

Average Operating

Power Supply Courrent

Cycle time = 1µs, 100% Duty,

.

1

-

-

5

mA

1

-

-

1.0

mA

100

- L

-

2.5

20*

µA

40

Standby Power

Supply Current

1

-

LL

-

0.5

10*

µA

*Those parameters are for reference only under 50℃