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PUMB9 Datasheet(PDF) 3 Page - NXP Semiconductors |
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PUMB9 Datasheet(HTML) 3 Page - NXP Semiconductors |
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3 / 8 page ![]() 2003 Oct 03 3 Philips Semiconductors Product specification PNP/PNP resistor-equipped transistors; R1 = 10 k Ω, R2 = 47 kΩ PEMB9; PUMB9 ORDERING INFORMATION LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). Notes 1. Device mounted on an FR4 printed-circuit board, single-sided copper, standard footprint. 2. Reflow soldering is the only recommended soldering method. TYPE NUMBER PACKAGE NAME DESCRIPTION VERSION PEMB9 − plastic surface mounted package; 6 leads SOT666 PUMB9 − plastic surface mounted package; 6 leads SOT363 SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per transistor VCBO collector-base voltage open emitter −−50 V VCEO collector-emitter voltage open base −−50 V VEBO emitter-base voltage open collector −−10 V VI input voltage positive − +6 V negative −−40 V IO output current (DC) −−100 mA ICM peak collector current −−100 mA Ptot total power dissipation Tamb ≤ 25 °C SOT363 note 1 − 200 mW SOT666 notes 1 and 2 − 200 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C Per device Ptot total power dissipation Tamb ≤ 25 °C SOT363 note 1 − 300 mW SOT666 notes 1 and 2 − 300 mW |
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