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PH8230 Datasheet(PDF) 9 Page - NXP Semiconductors |
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PH8230 Datasheet(HTML) 9 Page - NXP Semiconductors |
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9 / 12 page ![]() Philips Semiconductors PH8230 N-channel enhancement mode field-effect transistor Product data Rev. 01 — 23 June 2003 9 of 12 9397 750 11118 © Koninklijke Philips Electronics N.V. 2003. All rights reserved. 6. Package outline Fig 14. SOT669 (LFPAK). REFERENCES OUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC JEITA SOT669 MO-235 02-07-10 03-02-05 0 2.5 5 mm scale e E1 b c2 A2 A2 bc A e UNIT DIMENSIONS (mm are the original dimensions) mm 1.10 0.95 A3 A1 0.15 0.00 1.20 1.01 0.50 0.35 b2 4.41 3.62 0.25 0.19 c2 0.30 0.24 4.10 3.80 6.2 5.8 H 1.3 0.8 L2 0.85 0.40 L 1.3 0.8 L1 8 ° 0 ° wy D(1) 5.0 4.8 E(1) 3.3 3.1 E1 (1) D1 (1) max 0.25 4.20 1.27 0.25 0.1 1 23 4 mounting base D1 c Plastic single-ended surface mounted package (Philips version LFPAK); 4 leads SOT669 E b2 H D L2 L1 A A w M C C X 1/2 e yC θ θ (A ) 3 L A A1 detail X Note 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. |
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