Philips Semiconductors

PMN45EN

TrenchMOS™ enhanced logic level FET

Product data

Rev. 01 — 27 September 2002

8 of 12

9397 750 10193

© Koninklijke Philips Electronics N.V. 2002. All rights reserved.

Fig 12. Source (diode forward) current as a function of

source-drain (diode forward) voltage; typical

values.

Fig 13. Gate-source voltage as a function of gate

charge; typical values.

03aj74

0

5

10

15

20

00.5

11.5

VSD (V)

IS

(A)

Tj = 25 °C

150

°C

VGS = 0 V

03aj76

0

2

4

6

8

10

0

5

10

15

QG (nC)

VGS

(V)

ID = 5 A

Tj = 25 °C

VDD = 15 V