RN1001

~RN1006

2001-06-07

1

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

RN1001,RN1002,RN1003

RN1004,RN1005,RN1006

Switching, Inverter Circuit, Interface Circuit

And Driver Circuit Applications

l With built-in bias resistors

l Simplify circuit design

l Reduce a quantity of parts and manufacturing process

l Complementary to RN2001~RN2006

Equivalent Circuit and Bias Resister Values

Type No.

R1 (kΩ)

R2 (kΩ)

RN1001

4.7

4.7

RN1002

10

10

RN1003

22

22

RN1004

47

47

RN1005

2.2

47

RN1006

4.7

47

Characteristic

Symbol

Rating

Unit

Collector-base voltage

50

V

Collector-emitter voltage

RN1001~1006

50

V

RN1001~1004

10

Emitter-base voltage

RN1005, 1006

5

V

Collector current

100

mA

Collector power dissipation

400

mW

Junction temperature

150

°C

Storage temperature range

RN1001~1006

−55~150



°C

JEDEC

TO-92

EIAJ

SC-43

TOSHIBA

2-5F1B

Weight: 0.21g

Unit: mm