RN1601~RN1606

2001-06-07

1

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

RN1601,RN1602,RN1603

RN1604,RN1605,RN1606

Switching, Inverter Circuit, Interface Circuit

And Driver Circuit Applications

l Including two devices in SM6 (super mini type with 6 leads)

l With built-in bias resistors

l Simplify circuit design

l Reduce a quantity of parts and manufacturing process

l Complementary to RN2601~RN2606

Equivalent Circuit and Bias Resistor Values

°°°°C) (Q1, Q2 Common)

Characteristic

Symbol

Rating

Unit

Collector-base voltage

50

V

Collector-emitter voltage

RN1601~1606

50

V

RN1601~1604

10

Emitter-base voltage

RN1605, 1606

5

V

Collector current

100

mA

Collector power dissipation

300

mW

Junction temperature

150

°C

Storage temperature range

RN1601~1606

−55~150

°C

*

Total rating

JEDEC

―

EIAJ

―

TOSHIBA

2-3N1A

Weight: 0.015g

Type No.

R1 (kΩ)R2 (kΩ)

RN1601

4.7

4.7

RN1602

10

10

RN1603

22

22

RN1604

47

47

RN1605

2.2

47

RN1606

4.7

47

Unit: mm