RN2201~RN2206

2001-06-07

1

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

RN2201,RN2202,RN2203

RN2204,RN2205,RN2206

Switching, Inverter Circuit, Interface Circuit

And Driver Circuit Applications

l With built-in bias resistors

l Simplify circuit design

l Reduce a quantity of parts and manufacturing process

l Complementary to RN1201~RN1206

Equivalent Circuit and Bias Resistor Values

°°°°C)

Characteristic

Symbol

Rating

Unit

Collector-base voltage

−50

V

Collector-emitter voltage

RN2201~2206

−50

V

RN2201~2204

−10

Emitter-base voltage

RN2205, 2206

−5

V

Collector current

−100

mA

Collector power dissipation

300

mW

Junction temperature

150

°C

Storage temperature range

RN2201~2206

−55~150

°C

JEDEC

―

EIAJ

―

TOSHIBA

2-4E1A

Weight: 0.13g

Unit: mm

Type No.

R1 (kΩ)R2 (kΩ)

RN2201

4.7

4.7

RN2202

10

10

RN2203

22

22

RN2204

47

47

RN2205

2.2

47

RN2206

4.7

47